SEMI OpenIR  > 中科院半导体材料科学重点实验室
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment
Zhou XL; Chen YH; Zhang HY; Zhou GY; Li TF; Liu JQ; Ye XL; Xu B; Wang ZG; Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
2011
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume109Issue:8Pages:Article no.83501
metadata_83[zhou, x. l.; chen, y. h.; zhang, h. y.; zhou, g. y.; li, t. f.; liu, j. q.; ye, x. l.; xu, bo; wang, z. g.] chinese acad sci, key lab semicond mat sci, inst semicond, beijing 100083, peoples r china
KeywordInas Islands Mu-m Escape Gaas Gaas(100) Substrate
Subject Area半导体材料
Funding OrganizationNational Natural Science Foundation of China [60625402, 60990313]; 973 Program [2006CB604908, 2006CB921607]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21241
Collection中科院半导体材料科学重点实验室
Corresponding AuthorZhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
Recommended Citation
GB/T 7714
Zhou XL,Chen YH,Zhang HY,et al. Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment[J]. JOURNAL OF APPLIED PHYSICS,2011,109(8):Article no.83501.
APA Zhou XL.,Chen YH.,Zhang HY.,Zhou GY.,Li TF.,...&Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn.(2011).Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment.JOURNAL OF APPLIED PHYSICS,109(8),Article no.83501.
MLA Zhou XL,et al."Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment".JOURNAL OF APPLIED PHYSICS 109.8(2011):Article no.83501.
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