SEMI OpenIR  > 中科院半导体材料科学重点实验室
Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings
Ding F; Li B; Akopian N; Perinetti U; Chen YH; Peeters FM; Rastelli A; Zwiller V; Schmidt OG; Ding, F, IBM Res Zurich, Saumerstr 4, CH-8803 Ruschlikon, Switzerland
2011
Source PublicationJOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
ISSN1555-130X
Volume6Issue:1Pages:51-57
metadata_83[ding, f.; rastelli, a.; schmidt, o. g.] ifw dresden, inst integrat nanosci, d-01069 dresden, germany; [ding, f.; chen, y. h.] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; [li, b.; peeters, f. m.] univ antwerp, dept fys, b-2020 antwerp, belgium; [akopian, n.; perinetti, u.; zwiller, v.] delft univ technol, kavli inst nanosci, nl-2600 ga delft, netherlands
KeywordQuantum Ring Quantum Dot Neutral Exciton Aharonov Bohm Effect Gate Controlled Selective Etching Energy-spectra
Subject Area半导体材料
Funding OrganizationNWO (VIDI) ; CAS-MPG ; DFG [FOR730]; BMBF [01BM459]; NSFC China [60625402]; Flemish Science Foundation (FWO-V1)
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21239
Collection中科院半导体材料科学重点实验室
Corresponding AuthorDing, F, IBM Res Zurich, Saumerstr 4, CH-8803 Ruschlikon, Switzerland
Recommended Citation
GB/T 7714
Ding F,Li B,Akopian N,et al. Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings[J]. JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS,2011,6(1):51-57.
APA Ding F.,Li B.,Akopian N.,Perinetti U.,Chen YH.,...&Ding, F, IBM Res Zurich, Saumerstr 4, CH-8803 Ruschlikon, Switzerland.(2011).Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings.JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS,6(1),51-57.
MLA Ding F,et al."Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings".JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS 6.1(2011):51-57.
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