SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots
Zhou XL; Chen YH; Li TF; Zhou GY; Zhang HY; Ye XL; Xu B; Wang ZG; Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
2011
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume109Issue:9Pages:Article no.94311
metadata_83[zhou, x. l.; chen, y. h.; li, t. f.; zhou, g. y.; zhang, h. y.; ye, x. l.; xu, bo; wang, z. g.] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordSelf-organized Islands Molecular-beam-epitaxy Optical-properties Surfaces Emission Density Size
Subject Area半导体材料
Funding OrganizationNational Natural Science Foundation of China [60625402, 60990313]; 973 Program [2006CB604908, 2006CB921607]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21237
Collection中科院半导体材料科学重点实验室
Corresponding AuthorZhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
Recommended Citation
GB/T 7714
Zhou XL,Chen YH,Li TF,et al. Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots[J]. JOURNAL OF APPLIED PHYSICS,2011,109(9):Article no.94311.
APA Zhou XL.,Chen YH.,Li TF.,Zhou GY.,Zhang HY.,...&Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn.(2011).Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots.JOURNAL OF APPLIED PHYSICS,109(9),Article no.94311.
MLA Zhou XL,et al."Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots".JOURNAL OF APPLIED PHYSICS 109.9(2011):Article no.94311.
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