SEMI OpenIR  > 中科院半导体材料科学重点实验室
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
Liu JM; Liu XL; Li CM; Wei HY; Guo Y; Jiao CM; Li ZW; Xu XQ; Song HP; Yang SY; Zhu QS; Wang ZG; Yang AL; Yang TY; Wang HH; Liu, JM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. liujianming@semi.ac.cn; xlliu@semi.ac.cn
2011
Source PublicationNANOSCALE RESEARCH LETTERS
ISSN1931-7573
Volume6Pages:Article no.69
metadata_83[liu, jianming; liu, xianlin; li, chengming; wei, hongyuan; guo, yan; jiao, chunmei; li, zhiwei; xu, xiaoqing; song, huaping; yang, shaoyan; zhu, qinsen; wang, zhanguo; yang, anli] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; [yang, tieying; wang, huanhua] chinese acad sci, beijing synchrotron radiat facil, inst high energy phys, beijing 100039, peoples r china
KeywordCathodoluminescence Characterization Gallium Nitride Stresses Layers Heterostructure Deposition Constants Mechanism Sapphire Strain
Subject Area半导体材料
Funding OrganizationNational Science Foundation of China [60776015, 60976008]; Special Funds for Major State Basic Research Project (973 program) of China [2006 CB604907]; 863 High Technology R&D Program of China [2007AA03Z402, 2007AA03Z451]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21233
Collection中科院半导体材料科学重点实验室
Corresponding AuthorLiu, JM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. liujianming@semi.ac.cn; xlliu@semi.ac.cn
Recommended Citation
GB/T 7714
Liu JM,Liu XL,Li CM,et al. Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method[J]. NANOSCALE RESEARCH LETTERS,2011,6:Article no.69.
APA Liu JM.,Liu XL.,Li CM.,Wei HY.,Guo Y.,...&xlliu@semi.ac.cn.(2011).Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method.NANOSCALE RESEARCH LETTERS,6,Article no.69.
MLA Liu JM,et al."Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method".NANOSCALE RESEARCH LETTERS 6(2011):Article no.69.
Files in This Item:
File Name/Size DocType Version Access License
201115.pdf(4152KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Liu JM]'s Articles
[Liu XL]'s Articles
[Li CM]'s Articles
Baidu academic
Similar articles in Baidu academic
[Liu JM]'s Articles
[Liu XL]'s Articles
[Li CM]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Liu JM]'s Articles
[Liu XL]'s Articles
[Li CM]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.