SEMI OpenIR  > 中科院半导体材料科学重点实验室
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy
Shi K; Liu XL; Li DB; Wang J; Song HP; Xu XQ; Wei HY; Jiao CM; Yang SY; Song H; Zhu QS; Wang ZG; Shi, K, 35 Tsinghua E Rd, Beijing 100083, Peoples R China. shikai@semi.ac.cn; xlliu@semi.ac.cn; lidb@ciomp.ac.cn
2011
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
Volume257Issue:18Pages:8110-8112
metadata_83[shi, k.; liu, x. l.; wang, j.; song, h. p.; xu, x. q.; wei, h. y.; jiao, c. m.; yang, s. y.; zhu, q. s.; wang, z. g.] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; [li, d. b.; song, h.] chinese acad sci, changchun inst opt fine mech & phys, key lab excited state proc, changchun 130033, peoples r china
KeywordValence Band Offset Gan/diamond Heterojunction Xps Conduction Band Offset Chemical-vapor-deposition Algan/gan Hemts Diamond Gan Films
Subject Area半导体材料
Funding Organization863 High Technology R&D Program of China [2007AA03Z402, 2007AA03Z451]; Special Funds for Major State Basic Research Project (973 program) of China [2006CB604907]; National Science Foundation of China [60506002, 60776015]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21227
Collection中科院半导体材料科学重点实验室
Corresponding AuthorShi, K, 35 Tsinghua E Rd, Beijing 100083, Peoples R China. shikai@semi.ac.cn; xlliu@semi.ac.cn; lidb@ciomp.ac.cn
Recommended Citation
GB/T 7714
Shi K,Liu XL,Li DB,et al. Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy[J]. APPLIED SURFACE SCIENCE,2011,257(18):8110-8112.
APA Shi K.,Liu XL.,Li DB.,Wang J.,Song HP.,...&lidb@ciomp.ac.cn.(2011).Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy.APPLIED SURFACE SCIENCE,257(18),8110-8112.
MLA Shi K,et al."Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy".APPLIED SURFACE SCIENCE 257.18(2011):8110-8112.
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