Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate | |
Wu M; Zeng YP; Wang JX; Hu Q; Wu, M, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. wumeng@semi.ac.cn | |
2011 | |
Source Publication | CHINESE PHYSICS LETTERS
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ISSN | 0256-307X |
Volume | 28Issue:6Pages:Article no.68502 |
metadata_83 | [wu meng; zeng yi-ping] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; [wu meng; zeng yi-ping] chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china; [zeng yi-ping; wang jun-xi; hu qiang] chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china |
Keyword | Light-emitting-diodes Ultraviolet Growth |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2011-07-05 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/21223 |
Collection | 中科院半导体材料科学重点实验室 |
Corresponding Author | Wu, M, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. wumeng@semi.ac.cn |
Recommended Citation GB/T 7714 | Wu M,Zeng YP,Wang JX,et al. Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate[J]. CHINESE PHYSICS LETTERS,2011,28(6):Article no.68502. |
APA | Wu M,Zeng YP,Wang JX,Hu Q,&Wu, M, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. wumeng@semi.ac.cn.(2011).Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate.CHINESE PHYSICS LETTERS,28(6),Article no.68502. |
MLA | Wu M,et al."Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate".CHINESE PHYSICS LETTERS 28.6(2011):Article no.68502. |
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