SEMI OpenIR  > 中科院半导体材料科学重点实验室
Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate
Wu M; Zeng YP; Wang JX; Hu Q; Wu, M, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. wumeng@semi.ac.cn
2011
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume28Issue:6Pages:Article no.68502
metadata_83[wu meng; zeng yi-ping] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; [wu meng; zeng yi-ping] chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china; [zeng yi-ping; wang jun-xi; hu qiang] chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china
KeywordLight-emitting-diodes Ultraviolet Growth
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21223
Collection中科院半导体材料科学重点实验室
Corresponding AuthorWu, M, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. wumeng@semi.ac.cn
Recommended Citation
GB/T 7714
Wu M,Zeng YP,Wang JX,et al. Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate[J]. CHINESE PHYSICS LETTERS,2011,28(6):Article no.68502.
APA Wu M,Zeng YP,Wang JX,Hu Q,&Wu, M, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. wumeng@semi.ac.cn.(2011).Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate.CHINESE PHYSICS LETTERS,28(6),Article no.68502.
MLA Wu M,et al."Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate".CHINESE PHYSICS LETTERS 28.6(2011):Article no.68502.
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