SEMI OpenIR  > 中科院半导体照明研发中心
Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands
Wei TB; Kong QF; Wang JX; Li J; Zeng YP; Wang GH; Li JM; Liao YX; Yi FT; Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn
2011
Source PublicationOPTICS EXPRESS
ISSN1094-4087
Volume19Issue:2Pages:1065-1071
metadata_83[wei, tongbo; kong, qingfeng; wang, junxi; li, jing; zeng, yiping; wang, guohong; li, jinmin] chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china; [liao, yuanxun; yi, futing] chinese acad sci, inst high energy phys, beijing 100049, peoples r china
KeywordOutput Enhancement
Subject Area半导体材料
Funding OrganizationNational Natural Sciences Foundation of China [60806001, 50972144]; National High Technology Program of China [2009AA03A198]; Chinese Academy of Sciences [ISCAS2008T03]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21049
Collection中科院半导体照明研发中心
Corresponding AuthorWei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn
Recommended Citation
GB/T 7714
Wei TB,Kong QF,Wang JX,et al. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands[J]. OPTICS EXPRESS,2011,19(2):1065-1071.
APA Wei TB.,Kong QF.,Wang JX.,Li J.,Zeng YP.,...&Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn.(2011).Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.OPTICS EXPRESS,19(2),1065-1071.
MLA Wei TB,et al."Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands".OPTICS EXPRESS 19.2(2011):1065-1071.
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