SEMI OpenIR  > 中科院半导体照明研发中心
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
Wei TB; Yang JK; Hu Q; Duan RF; Huo ZQ; Wang JX; Zeng YP; Wang GH; Li JM; Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn
2011
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume314Issue:1Pages:141-145
metadata_83[wei, t. b.; yang, j. k.; hu, q.; duan, r. f.; huo, z. q.; wang, j. x.; zeng, y. p.; wang, g. h.; li, j. m.] chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china
KeywordCl Pl Stacking Fault Hvpe Gan Nonpolar Chemical-vapor-deposition Acceptor Pair Emission Phase Epitaxy Grown Gan Semiconductors Sapphire Films Nitride
Subject Area半导体材料
Funding OrganizationNational Natural Sciences Foundation of China [60806001]; National High Technology Program of China [2009AA03A198]; Chinese Academy of Sciences [ISCAS2008T03]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21047
Collection中科院半导体照明研发中心
Corresponding AuthorWei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn
Recommended Citation
GB/T 7714
Wei TB,Yang JK,Hu Q,et al. Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching[J]. JOURNAL OF CRYSTAL GROWTH,2011,314(1):141-145.
APA Wei TB.,Yang JK.,Hu Q.,Duan RF.,Huo ZQ.,...&Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn.(2011).Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching.JOURNAL OF CRYSTAL GROWTH,314(1),141-145.
MLA Wei TB,et al."Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching".JOURNAL OF CRYSTAL GROWTH 314.1(2011):141-145.
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