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Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED
Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH; Wang, B, Chinese Acad Sci, Inst Semicond, Lighting R&D Ctr, Beijing 100083, Peoples R China. wangbing@semi.ac.cn
2011
Source PublicationACTA PHYSICA SINICA
ISSN1000-3290
Volume60Issue:1Pages:Article no.16108
metadata_83[wang bing; li zhi-cong; yao ran; liang meng; yan fa-wang; wang guo-hong] chinese acad sci, inst semicond, lighting r&d ctr, beijing 100083, peoples r china
KeywordGan-based Led Al Composition Electron Blocking Layer Temperature Alloys Movpe
Subject Area半导体材料
Funding OrganizationNational High Technology Research and Development Program of china [2006AA03A114]
Indexed BySCI
Language中文
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21045
Collection中科院半导体照明研发中心
Corresponding AuthorWang, B, Chinese Acad Sci, Inst Semicond, Lighting R&D Ctr, Beijing 100083, Peoples R China. wangbing@semi.ac.cn
Recommended Citation
GB/T 7714
Wang B,Li ZC,Yao R,et al. Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED[J]. ACTA PHYSICA SINICA,2011,60(1):Article no.16108.
APA Wang B.,Li ZC.,Yao R.,Liang M.,Yan FW.,...&Wang, B, Chinese Acad Sci, Inst Semicond, Lighting R&D Ctr, Beijing 100083, Peoples R China. wangbing@semi.ac.cn.(2011).Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED.ACTA PHYSICA SINICA,60(1),Article no.16108.
MLA Wang B,et al."Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED".ACTA PHYSICA SINICA 60.1(2011):Article no.16108.
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