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The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films
Sun LL; Liu C; Li JM; Wang JX; Yan FW; Zeng YP; Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. lilisun@semi.ac.cn
2011
Source PublicationMATERIALS LETTERS
ISSN0167-577X
Volume65Issue:4Pages:667-669
metadata_83[sun, lili; liu, chao; li, jianming; wang, junxi; yan, fawang; zeng, yiping; li, jinmin] chinese acad sci, inst semicond, beijing 100083, peoples r china
KeywordDiluted Magnetic Semiconductors (Dmss) Ion implantatIon Room-temperature Ferromagnetic Properties Room-temperature
Subject Area半导体材料
Funding OrganizationNatural Science Foundation of China [60876004]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21043
Collection中科院半导体照明研发中心
Corresponding AuthorSun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. lilisun@semi.ac.cn
Recommended Citation
GB/T 7714
Sun LL,Liu C,Li JM,et al. The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films[J]. MATERIALS LETTERS,2011,65(4):667-669.
APA Sun LL.,Liu C.,Li JM.,Wang JX.,Yan FW.,...&Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. lilisun@semi.ac.cn.(2011).The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films.MATERIALS LETTERS,65(4),667-669.
MLA Sun LL,et al."The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films".MATERIALS LETTERS 65.4(2011):667-669.
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