| Time delay in InGaN multiple quantum well laser diodes at room temperature | |
Jin LA; Jiang DS ; Zhang ZM; Liu ZS; Zeng C; Zhao DG; Zhu JJ; Wang H; Duan LH; Yang H; Jin, LA, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. jilian@red.semi.ac.cn
| |
| 2010 | |
| Source Publication | CHINESE PHYSICS B
 |
| ISSN | 1674-1056 |
| Volume | 19Issue:12Pages:Article no.124211 |
| metadata_83 | [jin lian; jiang de-sheng; zhang zhu-ming; liu zong-shun; zeng chang; zhao de-gang; zhu jian-jun; wang hui; duan li-hong] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; [yang hui] chinese acad sci, suzhou inst nanotech & nanobion, suzhou 215123, peoples r china |
| Keyword | Ingan Laser Diode Delay Effect Saturable Absorber Traps Light Emission |
| Subject Area | 光电子学 |
| Funding Organization | National Natural Science Foundation of China [60976045, 60506001, 60836003, 60776047]; National Basic Research Program of China [2007CB936700]; National Natural Science Foundation for Distinguished Young Scholars of China [60925017] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2011-07-05 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/21033 |
| Collection | 集成光电子学国家重点实验室 |
| Corresponding Author | Jin, LA, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. jilian@red.semi.ac.cn |
| Recommended Citation GB/T 7714 | Jin LA,Jiang DS,Zhang ZM,et al. Time delay in InGaN multiple quantum well laser diodes at room temperature[J]. CHINESE PHYSICS B,2010,19(12):Article no.124211. |
| APA | Jin LA.,Jiang DS.,Zhang ZM.,Liu ZS.,Zeng C.,...&Jin, LA, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. jilian@red.semi.ac.cn.(2010).Time delay in InGaN multiple quantum well laser diodes at room temperature.CHINESE PHYSICS B,19(12),Article no.124211. |
| MLA | Jin LA,et al."Time delay in InGaN multiple quantum well laser diodes at room temperature".CHINESE PHYSICS B 19.12(2010):Article no.124211. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 201306.pdf（283KB） | 限制开放 | -- | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment