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Time delay in InGaN multiple quantum well laser diodes at room temperature
Jin LA; Jiang DS; Zhang ZM; Liu ZS; Zeng C; Zhao DG; Zhu JJ; Wang H; Duan LH; Yang H; Jin, LA, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. jilian@red.semi.ac.cn
2010
Source PublicationCHINESE PHYSICS B
ISSN1674-1056
Volume19Issue:12Pages:Article no.124211
metadata_83[jin lian; jiang de-sheng; zhang zhu-ming; liu zong-shun; zeng chang; zhao de-gang; zhu jian-jun; wang hui; duan li-hong] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; [yang hui] chinese acad sci, suzhou inst nanotech & nanobion, suzhou 215123, peoples r china
KeywordIngan Laser Diode Delay Effect Saturable Absorber Traps Light Emission
Subject Area光电子学
Funding OrganizationNational Natural Science Foundation of China [60976045, 60506001, 60836003, 60776047]; National Basic Research Program of China [2007CB936700]; National Natural Science Foundation for Distinguished Young Scholars of China [60925017]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21033
Collection集成光电子学国家重点实验室
Corresponding AuthorJin, LA, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. jilian@red.semi.ac.cn
Recommended Citation
GB/T 7714
Jin LA,Jiang DS,Zhang ZM,et al. Time delay in InGaN multiple quantum well laser diodes at room temperature[J]. CHINESE PHYSICS B,2010,19(12):Article no.124211.
APA Jin LA.,Jiang DS.,Zhang ZM.,Liu ZS.,Zeng C.,...&Jin, LA, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. jilian@red.semi.ac.cn.(2010).Time delay in InGaN multiple quantum well laser diodes at room temperature.CHINESE PHYSICS B,19(12),Article no.124211.
MLA Jin LA,et al."Time delay in InGaN multiple quantum well laser diodes at room temperature".CHINESE PHYSICS B 19.12(2010):Article no.124211.
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