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Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure
Zheng J; Zuo YH; Wang W; Tao YL; Xue CL; Cheng BW; Wang QM; Zheng, J, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, A35 QingHua E Rd, Beijing 100083, Peoples R China. zhengjun@semi.ac.cn
2011
Source PublicationMATERIALS RESEARCH BULLETIN
ISSN0025-5408
Volume46Issue:2Pages:262-265
metadata_83[zheng, j.; zuo, y. h.; wang, w.; tao, y. l.; xue, c. l.; cheng, b. w.; wang, q. m.] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
KeywordMultilayers Inorganic Compounds Sputtering Optical Properties Doped Si/sio2 Superlattices Erbium Silicate Er3++ Luminescence Films Photoluminescence
Subject Area光电子学
Funding OrganizationNational Basic Research Program of China (973 Program) [2007-CB613404]; National Natural Science Foundation of China [61036001, 61036003, 51072194, 60906035]; Chinese Academy of Sciences [ISCAS2009T01]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21011
Collection集成光电子学国家重点实验室
Corresponding AuthorZheng, J, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, A35 QingHua E Rd, Beijing 100083, Peoples R China. zhengjun@semi.ac.cn
Recommended Citation
GB/T 7714
Zheng J,Zuo YH,Wang W,et al. Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure[J]. MATERIALS RESEARCH BULLETIN,2011,46(2):262-265.
APA Zheng J.,Zuo YH.,Wang W.,Tao YL.,Xue CL.,...&Zheng, J, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, A35 QingHua E Rd, Beijing 100083, Peoples R China. zhengjun@semi.ac.cn.(2011).Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure.MATERIALS RESEARCH BULLETIN,46(2),262-265.
MLA Zheng J,et al."Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure".MATERIALS RESEARCH BULLETIN 46.2(2011):262-265.
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