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Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy
Su SJ; Wang W; Zhang GZ; Hu WX; Bai AQ; Xue CL; Zuo YH; Cheng BW; Wang QM; Cheng, BW, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China. cbw@red.semi.ac.cn
2011
Source PublicationACTA PHYSICA SINICA
ISSN1000-3290
Volume60Issue:2Pages:Article no.28101
metadata_83[su shao-jian; wang wei; zhang guang-ze; hu wei-xuan; bai an-qi; xue chun-lai; zuo yu-hua; cheng bu-wen; wang qi-ming] chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china
KeywordGesn Ge Molecular Beam Epitaxy Epitaxial Growth Semiconductors Ge(001)2x1
Subject Area光电子学
Funding OrganizationNational Basic Research Program of China [2007CB613404]; National Natural Science Foundation of China [61036003, 60906035, 51072194]; Chinese Academy of Sciences, China [ISCAS2009T01]
Indexed BySCI
Language中文
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21003
Collection集成光电子学国家重点实验室
Corresponding AuthorCheng, BW, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China. cbw@red.semi.ac.cn
Recommended Citation
GB/T 7714
Su SJ,Wang W,Zhang GZ,et al. Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy[J]. ACTA PHYSICA SINICA,2011,60(2):Article no.28101.
APA Su SJ.,Wang W.,Zhang GZ.,Hu WX.,Bai AQ.,...&Cheng, BW, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China. cbw@red.semi.ac.cn.(2011).Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy.ACTA PHYSICA SINICA,60(2),Article no.28101.
MLA Su SJ,et al."Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy".ACTA PHYSICA SINICA 60.2(2011):Article no.28101.
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