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Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology
Wang W; Huang BJ; Dong Z; Chen HD; Wang, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. wangweiww33@semi.ac.cn
2011
Source PublicationCHINESE PHYSICS B
ISSN1674-1056
Volume20Issue:1Pages:Article no.18503
metadata_83[wang wei; huang bei-ju; dong zan; chen hong-da] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
KeywordOptoelectronic Integrated Circuit Complementary Metal-oxide-semiconductor Technology Silicon-based Light Emitting Device Electroluminescence Avalanche Breakdown Photon-emission Current-density Diodes Model Electroluminescence Superlattices Efficiency Junctions Leds
Subject Area光电子学
Funding OrganizationNational Natural Science Foundation of China [60536030, 61036002, 60776024, 60877035, 61036009]; National High Technology Research and Development Program of China [2007AA04Z329, 2007AA04Z254]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20993
Collection集成光电子学国家重点实验室
Corresponding AuthorWang, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. wangweiww33@semi.ac.cn
Recommended Citation
GB/T 7714
Wang W,Huang BJ,Dong Z,et al. Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology[J]. CHINESE PHYSICS B,2011,20(1):Article no.18503.
APA Wang W,Huang BJ,Dong Z,Chen HD,&Wang, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. wangweiww33@semi.ac.cn.(2011).Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology.CHINESE PHYSICS B,20(1),Article no.18503.
MLA Wang W,et al."Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology".CHINESE PHYSICS B 20.1(2011):Article no.18503.
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