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Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix
Song C; Rui YJ; Wang QB; Xu J; Li W; Chen KJ; Zuo YH; Wang QM; Xu, J, Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China. junxu@nju.edu.cn
2011
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
ISSN0925-8388
Volume509Issue:9Pages:3963-3966
metadata_83[song, chao; rui, yunjun; wang, quanbiao; xu, jun; li, wei; chen, kunji] nanjing univ, nanjing natl lab microstruct, nanjing 210093, peoples r china; [song, chao; rui, yunjun; wang, quanbiao; xu, jun; li, wei; chen, kunji] nanjing univ, sch elect sci & engn, nanjing 210093, peoples r china; [song, chao] hanshan normal univ, dept phys & elect engn, chaozhou 521041, peoples r china; [zuo, yuhua; wang, qiming] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
KeywordSilicon Carbide Thin Films Crystal Structure Electronic Properties Thin-films Silicon Photoluminescence Superlattice Alloys
Subject Area光电子学
Funding Organization973 project [2007CB613401]; NSF of China [61036001, 10874070]; NSF of Jiangsu Province [BK2010010]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20991
Collection集成光电子学国家重点实验室
Corresponding AuthorXu, J, Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China. junxu@nju.edu.cn
Recommended Citation
GB/T 7714
Song C,Rui YJ,Wang QB,et al. Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2011,509(9):3963-3966.
APA Song C.,Rui YJ.,Wang QB.,Xu J.,Li W.,...&Xu, J, Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China. junxu@nju.edu.cn.(2011).Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix.JOURNAL OF ALLOYS AND COMPOUNDS,509(9),3963-3966.
MLA Song C,et al."Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix".JOURNAL OF ALLOYS AND COMPOUNDS 509.9(2011):3963-3966.
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