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Deep Energy Levels Formed by Se Implantation in Si
Gao LP; Han PD; Mao X; Fan YJ; Hu SX; Zhao CH; Mi YH; Han, PD, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. pdhan@semi.ac.cn
2011
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume28Issue:3Pages:Article no.36108
metadata_83[gao li-peng; han pei-de; mao xue; fan yu-jie; hu shao-xu; zhao chun-hua; mi yan-hong] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
KeywordSilicon Photodetector
Subject Area光电子学
Funding OrganizationNational Natural Science Foundation of China [60776046, 60976046, 60837001, 61021003]; National Basic Research Program of China [2006CB302802, 2010CB933800]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20989
Collection集成光电子学国家重点实验室
Corresponding AuthorHan, PD, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. pdhan@semi.ac.cn
Recommended Citation
GB/T 7714
Gao LP,Han PD,Mao X,et al. Deep Energy Levels Formed by Se Implantation in Si[J]. CHINESE PHYSICS LETTERS,2011,28(3):Article no.36108.
APA Gao LP.,Han PD.,Mao X.,Fan YJ.,Hu SX.,...&Han, PD, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. pdhan@semi.ac.cn.(2011).Deep Energy Levels Formed by Se Implantation in Si.CHINESE PHYSICS LETTERS,28(3),Article no.36108.
MLA Gao LP,et al."Deep Energy Levels Formed by Se Implantation in Si".CHINESE PHYSICS LETTERS 28.3(2011):Article no.36108.
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