| Deep Energy Levels Formed by Se Implantation in Si | |
Gao LP; Han PD ; Mao X; Fan YJ; Hu SX; Zhao CH; Mi YH; Han, PD, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. pdhan@semi.ac.cn
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| 2011 | |
| Source Publication | CHINESE PHYSICS LETTERS
 |
| ISSN | 0256-307X |
| Volume | 28Issue:3Pages:Article no.36108 |
| metadata_83 | [gao li-peng; han pei-de; mao xue; fan yu-jie; hu shao-xu; zhao chun-hua; mi yan-hong] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| Keyword | Silicon Photodetector |
| Subject Area | 光电子学 |
| Funding Organization | National Natural Science Foundation of China [60776046, 60976046, 60837001, 61021003]; National Basic Research Program of China [2006CB302802, 2010CB933800] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2011-07-05 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/20989 |
| Collection | 集成光电子学国家重点实验室 |
| Corresponding Author | Han, PD, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. pdhan@semi.ac.cn |
| Recommended Citation GB/T 7714 | Gao LP,Han PD,Mao X,et al. Deep Energy Levels Formed by Se Implantation in Si[J]. CHINESE PHYSICS LETTERS,2011,28(3):Article no.36108. |
| APA | Gao LP.,Han PD.,Mao X.,Fan YJ.,Hu SX.,...&Han, PD, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. pdhan@semi.ac.cn.(2011).Deep Energy Levels Formed by Se Implantation in Si.CHINESE PHYSICS LETTERS,28(3),Article no.36108. |
| MLA | Gao LP,et al."Deep Energy Levels Formed by Se Implantation in Si".CHINESE PHYSICS LETTERS 28.3(2011):Article no.36108. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 201214.pdf（639KB） | 限制开放 | -- | Application Full Text | |||
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