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Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate
Zheng J; Tao YL; Wang W; Zhang LZ; Zuo YH; Xue CL; Cheng BW; Wang QM; Zheng, J, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. zhengjun@semi.ac.cn
2011
Source PublicationMATERIALS LETTERS
ISSN0167-577X
Volume65Issue:5Pages:860-862
metadata_83[zheng, jun; tao, yeliao; wang, wei; zhang, lingzi; zuo, yuhua; xue, chunlai; cheng, buwen; wang, qiming] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
KeywordLuminescence Optical Materials And Properties Sputtering Thin Films Photoluminescence Er3++
Subject Area光电子学
Funding OrganizationNational Basic Research Program of China (973 Program) [2007-CB613404]; National Natural Science Foundation of China [60906035, 61036001, 61036003, 51072194]; State Key Lab on Integrated Optoelectronics, IS Division
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20985
Collection集成光电子学国家重点实验室
Corresponding AuthorZheng, J, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. zhengjun@semi.ac.cn
Recommended Citation
GB/T 7714
Zheng J,Tao YL,Wang W,et al. Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate[J]. MATERIALS LETTERS,2011,65(5):860-862.
APA Zheng J.,Tao YL.,Wang W.,Zhang LZ.,Zuo YH.,...&Zheng, J, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. zhengjun@semi.ac.cn.(2011).Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate.MATERIALS LETTERS,65(5),860-862.
MLA Zheng J,et al."Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate".MATERIALS LETTERS 65.5(2011):860-862.
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