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Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates
Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM; Cheng, BW, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. cbw@semi.ac.cn
2011
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume317Issue:1Pages:43-46
metadata_83[su, shaojian; wang, wei; cheng, buwen; zhang, guangze; hu, weixuan; xue, chunlai; zuo, yuhua; wang, qiming] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
KeywordThermal Stability Molecular Beam Epitaxy Germanium Tin Alloys Germanium Molecular-beam Epitaxy Low-temperature Semiconductors Ge(001)2x1
Subject Area光电子学
Funding OrganizationNational Basic Research Program of China [2007CB613404]; National Natural Science Foundation of China [60906035, 61036003, 51072194]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20983
Collection集成光电子学国家重点实验室
Corresponding AuthorCheng, BW, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. cbw@semi.ac.cn
Recommended Citation
GB/T 7714
Su SJ,Wang W,Cheng BW,et al. Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates[J]. JOURNAL OF CRYSTAL GROWTH,2011,317(1):43-46.
APA Su SJ.,Wang W.,Cheng BW.,Zhang GZ.,Hu WX.,...&Cheng, BW, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. cbw@semi.ac.cn.(2011).Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates.JOURNAL OF CRYSTAL GROWTH,317(1),43-46.
MLA Su SJ,et al."Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates".JOURNAL OF CRYSTAL GROWTH 317.1(2011):43-46.
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