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High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD
Wu CM; Zhang BP; Shang JZ; Cai LE; Zhang JY; Yu JZ; Wang QM; Wu, CM, Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Peoples R China.
2011
Source PublicationSEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN0268-1242
Volume26Issue:5Pages:Article no.55013
metadata_83[wu, c. m.; zhang, b. p.; cai, l. e.; zhang, j. y.; yu, j. z.; wang, q. m.] xiamen univ, dept phys, lab micro nano optoelect, xiamen 361005, peoples r china; [zhang, b. p.] xiamen univ, pen tung sah micro nano technol res ctr, xiamen 361005, peoples r china; [zhang, b. p.; zhang, j. y.; yu, j. z.; wang, q. m.] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; [shang, j. z.] nanyang technol univ, sch phys & math sci, div phys & appl phys, singapore 637371, singapore
KeywordChemical-vapor-deposition Molecular-beam Epitaxy Phase Epitaxy Mirrors Gan Wavelengths
Subject Area光电子学
Funding Organizationproject of High Technology Research and Development of China [2006AA03Z409]; National Natural Science Foundation of China [10974165, 91023048]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20981
Collection集成光电子学国家重点实验室
Corresponding AuthorWu, CM, Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Peoples R China.
Recommended Citation
GB/T 7714
Wu CM,Zhang BP,Shang JZ,et al. High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2011,26(5):Article no.55013.
APA Wu CM.,Zhang BP.,Shang JZ.,Cai LE.,Zhang JY.,...&Wu, CM, Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Peoples R China..(2011).High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,26(5),Article no.55013.
MLA Wu CM,et al."High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 26.5(2011):Article no.55013.
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