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A new method to measure the carrier concentration of p-GaN
Zhou M; Zhao DG; Zhao, DG, Chinese Acad Sci, Inst Semicond, State key Lab Integrated Optoelect, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
2011
Source PublicationACTA PHYSICA SINICA
ISSN1000-3290
Volume60Issue:3Pages:Article no.37804
metadata_83[zhao de-gang] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; [zhou mei] china agr univ, dept phys, beijing 100083, peoples r china
KeywordP-gan Carrier Concentration Measurement Ultraviolet Photodetector Laser-diodes Films
Subject Area光电子学
Funding OrganizationState Key Laboratory on Integrated Optoelectronics [IOSKL-KF200914]; Chinese Universities Scientific Fund [2009JS46, 2009-2-05]
Indexed BySCI
Language中文
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20977
Collection集成光电子学国家重点实验室
Corresponding AuthorZhao, DG, Chinese Acad Sci, Inst Semicond, State key Lab Integrated Optoelect, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
Recommended Citation
GB/T 7714
Zhou M,Zhao DG,Zhao, DG, Chinese Acad Sci, Inst Semicond, State key Lab Integrated Optoelect, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn. A new method to measure the carrier concentration of p-GaN[J]. ACTA PHYSICA SINICA,2011,60(3):Article no.37804.
APA Zhou M,Zhao DG,&Zhao, DG, Chinese Acad Sci, Inst Semicond, State key Lab Integrated Optoelect, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn.(2011).A new method to measure the carrier concentration of p-GaN.ACTA PHYSICA SINICA,60(3),Article no.37804.
MLA Zhou M,et al."A new method to measure the carrier concentration of p-GaN".ACTA PHYSICA SINICA 60.3(2011):Article no.37804.
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