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Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing
Wang W; Su SJ; Zheng J; Zhang GZ; Xue CL; Zuo YH; Cheng BW; Wang QM; Cheng, BW, POB 912, Beijing 100083, Peoples R China. cbw@semi.ac.cn
2011
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
Volume257Issue:9Pages:4468-4471
metadata_83[wang, wei; su, shaojian; zheng, jun; zhang, guangze; xue, chunlai; zuo, yuhua; cheng, buwen; wang, qiming] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
KeywordGermanium Tin Alloys Germanium Buffer Surface Morphology Evolution Mass Transport Surface Growth Evolution Decay
Subject Area光电子学
Funding OrganizationNational High Technology Research and Development Program of China [2006AA03Z415]; National Basic Research Program of China [2007CB613404]; National Natural Science Foundation [60906035]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20973
Collection集成光电子学国家重点实验室
Corresponding AuthorCheng, BW, POB 912, Beijing 100083, Peoples R China. cbw@semi.ac.cn
Recommended Citation
GB/T 7714
Wang W,Su SJ,Zheng J,et al. Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing[J]. APPLIED SURFACE SCIENCE,2011,257(9):4468-4471.
APA Wang W.,Su SJ.,Zheng J.,Zhang GZ.,Xue CL.,...&Cheng, BW, POB 912, Beijing 100083, Peoples R China. cbw@semi.ac.cn.(2011).Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing.APPLIED SURFACE SCIENCE,257(9),4468-4471.
MLA Wang W,et al."Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing".APPLIED SURFACE SCIENCE 257.9(2011):4468-4471.
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