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Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars
Zhu JH; Wang LJ; Zhang SM; Wang H; Zhao DG; Zhu JJ; Liu ZS; Jiang DS; Yang H; Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
2011
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume109Issue:8Pages:Article no.84339
metadata_83[zhu, jihong; wang, liangji; zhang, shuming; wang, hui; zhao, degang; zhu, jianjun; liu, zongshun; jiang, desheng; yang, hui] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; [yang, hui] chinese acad sci, suzhou inst nanotech & nanobion, suzhou 215123, peoples r china
Subject Area光电子学
Funding OrganizationNational Natural Science Foundation of China [60506001, 60776047, 60976045, 60836003]; National Basic Research Programme of China [2007CB936700]; National Science Foundation for Distinguished Young Scholars [60925017]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20959
Collection集成光电子学国家重点实验室
Corresponding AuthorZhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
Recommended Citation
GB/T 7714
Zhu JH,Wang LJ,Zhang SM,et al. Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars[J]. JOURNAL OF APPLIED PHYSICS,2011,109(8):Article no.84339.
APA Zhu JH.,Wang LJ.,Zhang SM.,Wang H.,Zhao DG.,...&Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn.(2011).Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars.JOURNAL OF APPLIED PHYSICS,109(8),Article no.84339.
MLA Zhu JH,et al."Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars".JOURNAL OF APPLIED PHYSICS 109.8(2011):Article no.84339.
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