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High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate
Liu SQ; Han Q; Zhu B; Yang XH; Ni HQ; He JF; Wang X; Li MF; Zhu Y; Wang J; Wang XP; Niu ZC; Liu, SQ, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. sqliu@semi.ac.cn; hanqin@red.semi.ac.cn
2011
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume98Issue:20Pages:Article no.201104
metadata_83[liu, s. q.; han, q.; zhu, b.; yang, x. h.; wang, x.; wang, j.; wang, x. p.] chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china; [ni, h. q.; he, j. f.; li, m. f.; zhu, y.; niu, z. c.] chinese acad sci, state key lab superlattices & microstruct, inst semicond, beijing 100083, peoples r china
KeywordI-n Photodiodes
Subject Area光电子学
Funding OrganizationNational Natural Foundation of China [60876039]; Hi-Tech Research and Development Program of China (863 Program) [2007AA03Z421, 2009AA03Z404]; National Basic Research Program of China (973 Program) [2006CB302802]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20951
Collection集成光电子学国家重点实验室
Corresponding AuthorLiu, SQ, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. sqliu@semi.ac.cn; hanqin@red.semi.ac.cn
Recommended Citation
GB/T 7714
Liu SQ,Han Q,Zhu B,et al. High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate[J]. APPLIED PHYSICS LETTERS,2011,98(20):Article no.201104.
APA Liu SQ.,Han Q.,Zhu B.,Yang XH.,Ni HQ.,...&hanqin@red.semi.ac.cn.(2011).High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate.APPLIED PHYSICS LETTERS,98(20),Article no.201104.
MLA Liu SQ,et al."High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate".APPLIED PHYSICS LETTERS 98.20(2011):Article no.201104.
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