| High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate | |
Liu SQ; Han Q; Zhu B; Yang XH; Ni HQ; He JF ; Wang X; Li MF; Zhu Y; Wang J; Wang XP; Niu ZC; Liu, SQ, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. sqliu@semi.ac.cn; hanqin@red.semi.ac.cn
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| 2011 | |
| Source Publication | APPLIED PHYSICS LETTERS
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| ISSN | 0003-6951 |
| Volume | 98Issue:20Pages:Article no.201104 |
| metadata_83 | [liu, s. q.; han, q.; zhu, b.; yang, x. h.; wang, x.; wang, j.; wang, x. p.] chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china; [ni, h. q.; he, j. f.; li, m. f.; zhu, y.; niu, z. c.] chinese acad sci, state key lab superlattices & microstruct, inst semicond, beijing 100083, peoples r china |
| Keyword | I-n Photodiodes |
| Subject Area | 光电子学 |
| Funding Organization | National Natural Foundation of China [60876039]; Hi-Tech Research and Development Program of China (863 Program) [2007AA03Z421, 2009AA03Z404]; National Basic Research Program of China (973 Program) [2006CB302802] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2011-07-05 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/20951 |
| Collection | 集成光电子学国家重点实验室 |
| Corresponding Author | Liu, SQ, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. sqliu@semi.ac.cn; hanqin@red.semi.ac.cn |
| Recommended Citation GB/T 7714 | Liu SQ,Han Q,Zhu B,et al. High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate[J]. APPLIED PHYSICS LETTERS,2011,98(20):Article no.201104. |
| APA | Liu SQ.,Han Q.,Zhu B.,Yang XH.,Ni HQ.,...&hanqin@red.semi.ac.cn.(2011).High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate.APPLIED PHYSICS LETTERS,98(20),Article no.201104. |
| MLA | Liu SQ,et al."High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate".APPLIED PHYSICS LETTERS 98.20(2011):Article no.201104. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 201125.pdf（197KB） | 限制开放 | -- | Application Full Text | |||
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