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The investigation on carrier distribution in InGaN/GaN multiple quantum well layers
Zhu JH; Zhang SM; Wang H; Zhao DG; Zhu JJ; Liu ZS; Jiang DS; Qiu YX; Yang H; Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
2011
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume109Issue:9Pages:Article no.93117
metadata_83[zhu, j. h.; zhang, s. m.; wang, h.; zhao, d. g.; zhu, j. j.; liu, z. s.; jiang, d. s.; yang, h.] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; [qiu, y. x.; yang, h.] chinese acad sci, suzhou inst nanotech & nanobion, suzhou 215123, peoples r china
KeywordDiodes Efficiency
Subject Area光电子学
Funding OrganizationNational Science Fund for Distinguished Young Scholars [60925017]; National Natural Science Foundation of China [10990100, 60836003]; National Basic Research Program of China [2007CB936700]; National High Technology Research and Development Program of China [2007AA03Z401]; Chinese Academy of Sciences [ISCAS2009T05O9S4050000]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20949
Collection集成光电子学国家重点实验室
Corresponding AuthorZhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
Recommended Citation
GB/T 7714
Zhu JH,Zhang SM,Wang H,et al. The investigation on carrier distribution in InGaN/GaN multiple quantum well layers[J]. JOURNAL OF APPLIED PHYSICS,2011,109(9):Article no.93117.
APA Zhu JH.,Zhang SM.,Wang H.,Zhao DG.,Zhu JJ.,...&Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn.(2011).The investigation on carrier distribution in InGaN/GaN multiple quantum well layers.JOURNAL OF APPLIED PHYSICS,109(9),Article no.93117.
MLA Zhu JH,et al."The investigation on carrier distribution in InGaN/GaN multiple quantum well layers".JOURNAL OF APPLIED PHYSICS 109.9(2011):Article no.93117.
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