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Wavelength-Tunable Si-Based InGaAs Resonant Cavity Enhanced Photodetectors Using Sol-Gel Wafer Bonding Technology
Zhang LZ; Cao Q; Zuo YH; Xue CL; Cheng BW; Wang QM; Zhang, LZ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. zhang.labs@gmail.com; pobakey@semi.ac.cn; yhzuo@semi.ac.cn; clxue@semi.ac.cn; cbw@semi.ac.cn; qmwang@semi.ac.cn
2011
Source PublicationIEEE PHOTONICS TECHNOLOGY LETTERS
ISSN1041-1135
Volume23Issue:13Pages:881-883
metadata_83[zhang, lingzi; cao, quan; zuo, yuhua; xue, chunlai; cheng, buwen; wang, qiming] chinese acad sci, inst semicond, beijing 100083, peoples r china
KeywordResonant Cavity Enhanced (Rce) Photodetector Silicon Photonics Sol-gel Wafer Bonding Thermal Tuning Interfacial Energy Silicon-wafers High-speed Temperature Photodiodes Morphology Power
Subject Area光电子学
Funding OrganizationNational Basic Research Program of China [2006CB302802]; National Natural Science Foundation [60676005, 60906035]; Chinese Academy of Sciences [ISCAS2009T01]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20945
Collection集成光电子学国家重点实验室
Corresponding AuthorZhang, LZ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. zhang.labs@gmail.com; pobakey@semi.ac.cn; yhzuo@semi.ac.cn; clxue@semi.ac.cn; cbw@semi.ac.cn; qmwang@semi.ac.cn
Recommended Citation
GB/T 7714
Zhang LZ,Cao Q,Zuo YH,et al. Wavelength-Tunable Si-Based InGaAs Resonant Cavity Enhanced Photodetectors Using Sol-Gel Wafer Bonding Technology[J]. IEEE PHOTONICS TECHNOLOGY LETTERS,2011,23(13):881-883.
APA Zhang LZ.,Cao Q.,Zuo YH.,Xue CL.,Cheng BW.,...&qmwang@semi.ac.cn.(2011).Wavelength-Tunable Si-Based InGaAs Resonant Cavity Enhanced Photodetectors Using Sol-Gel Wafer Bonding Technology.IEEE PHOTONICS TECHNOLOGY LETTERS,23(13),881-883.
MLA Zhang LZ,et al."Wavelength-Tunable Si-Based InGaAs Resonant Cavity Enhanced Photodetectors Using Sol-Gel Wafer Bonding Technology".IEEE PHOTONICS TECHNOLOGY LETTERS 23.13(2011):881-883.
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