| Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition | |
Liang JR; Hu M; Kan Q ; Liang XQ; Wang XD; Li GK; Chen HD; Liang, JR, Tianjin Univ, Sch Elect & Informat Technol, Tianjin 300072, Peoples R China. liang_jiran@tju.edu.cn
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| 2011 | |
| Source Publication | RARE METALS
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| ISSN | 1001-0521 |
| Volume | 30Issue:3Pages:247-251 |
| metadata_83 | [liang jiran; hu ming] tianjin univ, sch elect & informat technol, tianjin 300072, peoples r china; [liang jiran; kan qiang; chen hongda] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; [liang xiuqin; wang xiaodong] chinese acad sci, inst semicond, engn res ctr semicond integrated technol, beijing 100083, peoples r china; [li guike] chinese acad sci, inst semicond, state key lab super lattices & microstruct, beijing 100083, peoples r china |
| Keyword | Vanadium Dioxide Infrared Transition Diffraction Effect Dual Ion Beam Sputtering Annealing |
| Subject Area | 半导体材料 |
| Funding Organization | National High-Tech Research and Development Program of China [2008AA031401]; National Natural Science Foundation of China [60771019]; Natural Science Foundation of Tianjin, China [08JCZD-JC17500]; State Key Lab on Integrated Optoelectronics [2010KFB001]; Research Fund for the Doctoral Program of Higher Education of China [20100032120029] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2011-07-05 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/20941 |
| Collection | 集成光电子学国家重点实验室 |
| Corresponding Author | Liang, JR, Tianjin Univ, Sch Elect & Informat Technol, Tianjin 300072, Peoples R China. liang_jiran@tju.edu.cn |
| Recommended Citation GB/T 7714 | Liang JR,Hu M,Kan Q,et al. Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition[J]. RARE METALS,2011,30(3):247-251. |
| APA | Liang JR.,Hu M.,Kan Q.,Liang XQ.,Wang XD.,...&Liang, JR, Tianjin Univ, Sch Elect & Informat Technol, Tianjin 300072, Peoples R China. liang_jiran@tju.edu.cn.(2011).Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition.RARE METALS,30(3),247-251. |
| MLA | Liang JR,et al."Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition".RARE METALS 30.3(2011):247-251. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 201101.pdf（480KB） | 限制开放 | -- | Application Full Text | |||
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