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| Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device | |
| Wang KY; Edmonds KW; Irvine AC; Tatara G; De Ranieri E; Wunderlich J; Olejnik K; Rushforth AW; Campion RP; Williams DA; Foxon CT; Gallagher BL; Wang, KY, CAS, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. kywang@semi.ac.cn | |
| 2010 | |
| Source Publication | APPLIED PHYSICS LETTERS
 |
| ISSN | 0003-6951 |
| Volume | 97Issue:26Pages:Article no.262102 |
| metadata_83 | [wang, k. y.; edmonds, k. w.] cas, inst semicond, sklsm, beijing 100083, peoples r china; [wang, k. y.; de ranieri, e.; wunderlich, j.; olejnik, k.; williams, d. a.] hitachi cambridge lab, cambridge cb3 0he, england; [edmonds, k. w.; rushforth, a. w.; foxon, c. t.; gallagher, b. l.] univ nottingham, sch phys & astron, nottingham ng7 2rd, england; [irvine, a. c.; de ranieri, e.] univ cambridge, microelect res ctr, cambridge cb3 0he, england; [tatara, g.; campion, r. p.] tokyo metropolitan univ, grad sch sci, tokyo 1920397, japan |
| Keyword | Mn)As (Ga |
| Subject Area | 半导体物理 |
| Funding Organization | EU [IST-015728, 214499]; EPSRC-UK [EP/H002294/01]; EPSRC-NSFC [10911130232/A0402]; Chinese Academy of Sciences ; Kurata Memorial Hitachi Science and Technology Foundation ; Sumitomo Foundation ; EPSRC [EP/H003487/1]; [1948027] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2011-07-05 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/20929 |
| Collection | 半导体超晶格国家重点实验室 |
| Corresponding Author | Wang, KY, CAS, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. kywang@semi.ac.cn |
| Recommended Citation GB/T 7714 | Wang KY,Edmonds KW,Irvine AC,et al. Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device[J]. APPLIED PHYSICS LETTERS,2010,97(26):Article no.262102. |
| APA | Wang KY.,Edmonds KW.,Irvine AC.,Tatara G.,De Ranieri E.,...&Wang, KY, CAS, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. kywang@semi.ac.cn.(2010).Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device.APPLIED PHYSICS LETTERS,97(26),Article no.262102. |
| MLA | Wang KY,et al."Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device".APPLIED PHYSICS LETTERS 97.26(2010):Article no.262102. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 201290.pdf（231KB） | 限制开放 | -- | Application Full Text | |||
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