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Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure | |
Zhang LB; Cheng F; Zhai F; Chang K; Zhang, LB, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. | |
2011 | |
Source Publication | PHYSICAL REVIEW B
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ISSN | 1098-0121 |
Volume | 83Issue:8Pages:Article no.81402 |
metadata_83 | [zhang, l. b.; cheng, f.; chang, kai] chinese acad sci, inst semicond, sklsm, beijing 100083, peoples r china; [cheng, f.] changsha univ sci & technol, dept phys & elect sci, changsha 410004, hunan, peoples r china; [zhai, f.] zhejiang normal univ, ctr stat & theoret condensed matterphys, jinhua 321004, peoples r china; [zhai, f.] zhejiang normal univ, dept phys, jinhua 321004, peoples r china; [chang, kai] beijing computat sci res ctr, beijing 100089, peoples r china |
Subject Area | 半导体物理 |
Funding Organization | NSFC [60525405, 10874175, 10947134, 11004017, 10704013]; RFDP [200801411042]; Fundamental Research Funds for the Central Universities [DUT10LK36] |
Indexed By | SCI |
Language | 英语 |
Date Available | 2011-07-05 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20923 |
Collection | 半导体超晶格国家重点实验室 |
Corresponding Author | Zhang, LB, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. |
Recommended Citation GB/T 7714 | Zhang LB,Cheng F,Zhai F,et al. Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure[J]. PHYSICAL REVIEW B,2011,83(8):Article no.81402. |
APA | Zhang LB,Cheng F,Zhai F,Chang K,&Zhang, LB, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China..(2011).Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure.PHYSICAL REVIEW B,83(8),Article no.81402. |
MLA | Zhang LB,et al."Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure".PHYSICAL REVIEW B 83.8(2011):Article no.81402. |
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