Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure

	Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure
	Zhang LB; Cheng F; Zhai F; Chang K; Zhang, LB, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.
	2011
Source Publication	PHYSICAL REVIEW B
ISSN	1098-0121
Volume	83 Issue:8 Pages:Article no.81402
metadata_83	[zhang, l. b.; cheng, f.; chang, kai] chinese acad sci, inst semicond, sklsm, beijing 100083, peoples r china; [cheng, f.] changsha univ sci & technol, dept phys & elect sci, changsha 410004, hunan, peoples r china; [zhai, f.] zhejiang normal univ, ctr stat & theoret condensed matterphys, jinhua 321004, peoples r china; [zhai, f.] zhejiang normal univ, dept phys, jinhua 321004, peoples r china; [chang, kai] beijing computat sci res ctr, beijing 100089, peoples r china
Subject Area	半导体物理
Funding Organization	NSFC [60525405, 10874175, 10947134, 11004017, 10704013]; RFDP [200801411042]; Fundamental Research Funds for the Central Universities [DUT10LK36]
Indexed By	SCI
Language	英语
Date Available	2011-07-05
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20923
Collection	半导体超晶格国家重点实验室
Corresponding Author	Zhang, LB, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.
Recommended Citation GB/T 7714	Zhang LB,Cheng F,Zhai F,et al. Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure[J]. PHYSICAL REVIEW B,2011,83(8):Article no.81402.
APA	Zhang LB,Cheng F,Zhai F,Chang K,&Zhang, LB, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China..(2011).Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure.PHYSICAL REVIEW B,83(8),Article no.81402.
MLA	Zhang LB,et al."Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure".PHYSICAL REVIEW B 83.8(2011):Article no.81402.

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