SEMI OpenIR  > 半导体超晶格国家重点实验室
Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure
Zhang LB; Cheng F; Zhai F; Chang K; Zhang, LB, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.
2011
Source PublicationPHYSICAL REVIEW B
ISSN1098-0121
Volume83Issue:8Pages:Article no.81402
metadata_83[zhang, l. b.; cheng, f.; chang, kai] chinese acad sci, inst semicond, sklsm, beijing 100083, peoples r china; [cheng, f.] changsha univ sci & technol, dept phys & elect sci, changsha 410004, hunan, peoples r china; [zhai, f.] zhejiang normal univ, ctr stat & theoret condensed matterphys, jinhua 321004, peoples r china; [zhai, f.] zhejiang normal univ, dept phys, jinhua 321004, peoples r china; [chang, kai] beijing computat sci res ctr, beijing 100089, peoples r china
Subject Area半导体物理
Funding OrganizationNSFC [60525405, 10874175, 10947134, 11004017, 10704013]; RFDP [200801411042]; Fundamental Research Funds for the Central Universities [DUT10LK36]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20923
Collection半导体超晶格国家重点实验室
Corresponding AuthorZhang, LB, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Zhang LB,Cheng F,Zhai F,et al. Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure[J]. PHYSICAL REVIEW B,2011,83(8):Article no.81402.
APA Zhang LB,Cheng F,Zhai F,Chang K,&Zhang, LB, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China..(2011).Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure.PHYSICAL REVIEW B,83(8),Article no.81402.
MLA Zhang LB,et al."Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure".PHYSICAL REVIEW B 83.8(2011):Article no.81402.
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