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Charge transfer and optical phonon mixing in few-layer graphene chemically doped with sulfuric acid
Zhao WJ; Tan PH; Zhang J; Liu JA; Zhao, WJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. phtan@semi.ac.cn
2010
Source PublicationPHYSICAL REVIEW B
ISSN1098-0121
Volume82Issue:24Pages:Article no.245423
metadata_83[zhao, weijie; tan, pingheng; zhang, jun; liu, jian] chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china
KeywordRaman-spectroscopy Bilayer Graphene Graphite Scattering Spectra Carbon Films
Subject Area半导体物理
Funding OrganizationNational Natural Science Foundation of China [10934007, 10874177]; special funds for the Major State Basic Research of China [2009CB929300]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20921
Collection半导体超晶格国家重点实验室
Corresponding AuthorZhao, WJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. phtan@semi.ac.cn
Recommended Citation
GB/T 7714
Zhao WJ,Tan PH,Zhang J,et al. Charge transfer and optical phonon mixing in few-layer graphene chemically doped with sulfuric acid[J]. PHYSICAL REVIEW B,2010,82(24):Article no.245423.
APA Zhao WJ,Tan PH,Zhang J,Liu JA,&Zhao, WJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. phtan@semi.ac.cn.(2010).Charge transfer and optical phonon mixing in few-layer graphene chemically doped with sulfuric acid.PHYSICAL REVIEW B,82(24),Article no.245423.
MLA Zhao WJ,et al."Charge transfer and optical phonon mixing in few-layer graphene chemically doped with sulfuric acid".PHYSICAL REVIEW B 82.24(2010):Article no.245423.
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