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Molecular beam epitaxy growth of GaAs on an offcut Ge substrate
He JF; Niu ZC; Chang XY; Ni HQ; Zhu Y; Li MF; Shang XJ; Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. zcniu@semi.ac.cn
2011
Source PublicationCHINESE PHYSICS B
ISSN1674-1056
Volume20Issue:1Pages:Article no.18102
metadata_83[he ji-fang; niu zhi-chuan; chang xiu-ying; ni hai-qiao; zhu yan; li mi-feng; shang xiang-jun] chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china
KeywordMolecular Beam Epitaxy Anti-phase Domain Gaas/ge Interface Chemical Vapor-deposition Junction Solar-cells Domain-free Growth Temperature Quality Future
Subject Area半导体物理
Funding OrganizationNational Natural Science Foundation of China [60625405]; National Basic Research Program of China [2007CB936304, 2010CB327601]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20905
Collection半导体超晶格国家重点实验室
Corresponding AuthorNiu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. zcniu@semi.ac.cn
Recommended Citation
GB/T 7714
He JF,Niu ZC,Chang XY,et al. Molecular beam epitaxy growth of GaAs on an offcut Ge substrate[J]. CHINESE PHYSICS B,2011,20(1):Article no.18102.
APA He JF.,Niu ZC.,Chang XY.,Ni HQ.,Zhu Y.,...&Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. zcniu@semi.ac.cn.(2011).Molecular beam epitaxy growth of GaAs on an offcut Ge substrate.CHINESE PHYSICS B,20(1),Article no.18102.
MLA He JF,et al."Molecular beam epitaxy growth of GaAs on an offcut Ge substrate".CHINESE PHYSICS B 20.1(2011):Article no.18102.
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