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Formation of silicon nanocrystals embedded in high-kappa dielectric HfO2 and their application for charge storage
Li WL; Jia R; Chen C; Li HF; Liu XY; Yue HH; Ding WC; Ye TC; Kasai S; Hashizume T; Wu NJ; Xu BS; Jia, R, Chinese Acad Sci, Microwave Devices & Integrated Circuits Dept, Inst Microelect, Beijing 100029, Peoples R China. jiarui@ime.ac.cn
2011
Source PublicationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN1071-1023
Volume29Issue:2Pages:Article no.21018
metadata_83[li, weilong; jia, rui; chen, chen; li, haofeng; liu, xinyu; yue, huihui; ding, wuchang; ye, tianchun] chinese acad sci, microwave devices & integrated circuits dept, inst microelect, beijing 100029, peoples r china; [kasai, seiya; hashizume, tamotsu] hokkaido univ, res ctr integrated quantum elect, kita ku, sapporo, hokkaido 0608628, japan; [wu, nanjian] chinese acad sci, state key lab superlattices & microstruct, inst semicond, beijing 100083, peoples r china; [xu, bingshe] taiyuan univ technol, coll mat sci & engn, taiyuan 030024, peoples r china
KeywordSi Nanocrystals Memory Technology Deposition Voltage Layer
Subject Area微电子学
Funding Organization973 Projects [2006CB604904, 2009CB939703]; Chinese NSF [60706023, 60676001, 60977050]; Chinese Academy of Sciences (CAS) ; PRESTO, Japan Science and Technology Agency, Japan
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20885
Collection半导体超晶格国家重点实验室
Corresponding AuthorJia, R, Chinese Acad Sci, Microwave Devices & Integrated Circuits Dept, Inst Microelect, Beijing 100029, Peoples R China. jiarui@ime.ac.cn
Recommended Citation
GB/T 7714
Li WL,Jia R,Chen C,et al. Formation of silicon nanocrystals embedded in high-kappa dielectric HfO2 and their application for charge storage[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2011,29(2):Article no.21018.
APA Li WL.,Jia R.,Chen C.,Li HF.,Liu XY.,...&Jia, R, Chinese Acad Sci, Microwave Devices & Integrated Circuits Dept, Inst Microelect, Beijing 100029, Peoples R China. jiarui@ime.ac.cn.(2011).Formation of silicon nanocrystals embedded in high-kappa dielectric HfO2 and their application for charge storage.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,29(2),Article no.21018.
MLA Li WL,et al."Formation of silicon nanocrystals embedded in high-kappa dielectric HfO2 and their application for charge storage".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 29.2(2011):Article no.21018.
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