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Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell
Shang XJ; He JF; Wang HL; Li MF; Zhu Y; Niu ZC; Fu Y; Shang, XJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. xjshang@semi.ac.cn; fyg@theochem.kth.se
2011
Source PublicationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN0947-8396
Volume103Issue:2Pages:335-341
metadata_83[shang, x. j.; he, j. f.; wang, h. l.; li, m. f.; zhu, y.; niu, z. c.] chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china; [shang, x. j.; fu, y.] royal inst technol, dept theoret chem, sch biotechnol, s-10691 stockholm, sweden
KeywordIntermediate-band Transitions
Subject Area半导体物理
Funding OrganizationChinese Natural Science Fund [60625405]; 973 project in China [2010CB327601]; Richertska Foundation in Sweden ; Swedish National Infrastructure for Computing [SNIC 001-09-52]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20877
Collection半导体超晶格国家重点实验室
Corresponding AuthorShang, XJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. xjshang@semi.ac.cn; fyg@theochem.kth.se
Recommended Citation
GB/T 7714
Shang XJ,He JF,Wang HL,et al. Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2011,103(2):335-341.
APA Shang XJ.,He JF.,Wang HL.,Li MF.,Zhu Y.,...&fyg@theochem.kth.se.(2011).Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,103(2),335-341.
MLA Shang XJ,et al."Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 103.2(2011):335-341.
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