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Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell | |
Shang XJ; He JF![]() ![]() | |
2011 | |
Source Publication | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
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ISSN | 0947-8396 |
Volume | 103Issue:2Pages:335-341 |
metadata_83 | [shang, x. j.; he, j. f.; wang, h. l.; li, m. f.; zhu, y.; niu, z. c.] chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china; [shang, x. j.; fu, y.] royal inst technol, dept theoret chem, sch biotechnol, s-10691 stockholm, sweden |
Keyword | Intermediate-band Transitions |
Subject Area | 半导体物理 |
Funding Organization | Chinese Natural Science Fund [60625405]; 973 project in China [2010CB327601]; Richertska Foundation in Sweden ; Swedish National Infrastructure for Computing [SNIC 001-09-52] |
Indexed By | SCI |
Language | 英语 |
Date Available | 2011-07-05 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20877 |
Collection | 半导体超晶格国家重点实验室 |
Corresponding Author | Shang, XJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. xjshang@semi.ac.cn; fyg@theochem.kth.se |
Recommended Citation GB/T 7714 | Shang XJ,He JF,Wang HL,et al. Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2011,103(2):335-341. |
APA | Shang XJ.,He JF.,Wang HL.,Li MF.,Zhu Y.,...&fyg@theochem.kth.se.(2011).Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,103(2),335-341. |
MLA | Shang XJ,et al."Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 103.2(2011):335-341. |
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