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Hole mediated magnetism in Mn-doped GaN nanowires
Zhang XW; Li JB; Chang K; Li SS; Xia JB; Zhang, XW, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xiajb@red.semi.ac.cn
2011
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume109Issue:7Pages:Article no.74313
metadata_83[zhang, xiu-wen; li, jingbo; chang, kai; li, shu-shen; xia, jian-bai] chinese acad sci, state key lab superlattices & microstruct, inst semicond, beijing 100083, peoples r china
KeywordMolecular-beam Epitaxy Room-temperature Quantum Wires Semiconductors Ferromagnetism Field Gamnn
Subject Area半导体物理
Funding OrganizationNational Natural Science Foundation [60521001, 60525405]; National Basic Research Program of China [2011CB922200]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20861
Collection半导体超晶格国家重点实验室
Corresponding AuthorZhang, XW, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xiajb@red.semi.ac.cn
Recommended Citation
GB/T 7714
Zhang XW,Li JB,Chang K,et al. Hole mediated magnetism in Mn-doped GaN nanowires[J]. JOURNAL OF APPLIED PHYSICS,2011,109(7):Article no.74313.
APA Zhang XW,Li JB,Chang K,Li SS,Xia JB,&Zhang, XW, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xiajb@red.semi.ac.cn.(2011).Hole mediated magnetism in Mn-doped GaN nanowires.JOURNAL OF APPLIED PHYSICS,109(7),Article no.74313.
MLA Zhang XW,et al."Hole mediated magnetism in Mn-doped GaN nanowires".JOURNAL OF APPLIED PHYSICS 109.7(2011):Article no.74313.
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