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Hole mediated magnetism in Mn-doped GaN nanowires | |
Zhang XW; Li JB![]() | |
2011 | |
Source Publication | JOURNAL OF APPLIED PHYSICS
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ISSN | 0021-8979 |
Volume | 109Issue:7Pages:Article no.74313 |
metadata_83 | [zhang, xiu-wen; li, jingbo; chang, kai; li, shu-shen; xia, jian-bai] chinese acad sci, state key lab superlattices & microstruct, inst semicond, beijing 100083, peoples r china |
Keyword | Molecular-beam Epitaxy Room-temperature Quantum Wires Semiconductors Ferromagnetism Field Gamnn |
Subject Area | 半导体物理 |
Funding Organization | National Natural Science Foundation [60521001, 60525405]; National Basic Research Program of China [2011CB922200] |
Indexed By | SCI |
Language | 英语 |
Date Available | 2011-07-05 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20861 |
Collection | 半导体超晶格国家重点实验室 |
Corresponding Author | Zhang, XW, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xiajb@red.semi.ac.cn |
Recommended Citation GB/T 7714 | Zhang XW,Li JB,Chang K,et al. Hole mediated magnetism in Mn-doped GaN nanowires[J]. JOURNAL OF APPLIED PHYSICS,2011,109(7):Article no.74313. |
APA | Zhang XW,Li JB,Chang K,Li SS,Xia JB,&Zhang, XW, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xiajb@red.semi.ac.cn.(2011).Hole mediated magnetism in Mn-doped GaN nanowires.JOURNAL OF APPLIED PHYSICS,109(7),Article no.74313. |
MLA | Zhang XW,et al."Hole mediated magnetism in Mn-doped GaN nanowires".JOURNAL OF APPLIED PHYSICS 109.7(2011):Article no.74313. |
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