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Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base
Shen C; Wang LG; Zheng HZ; Zhu H; Chen L; Zhao JH; Zheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. hzzheng@red.semi.ac.cn
2011
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume109Issue:9Pages:Article no.93507
metadata_83[shen, c.; wang, l. g.; zheng, h. z.; zhu, h.; chen, l.; zhao, j. h.] chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china
KeywordGallium-arsenide Semiconductors Field
Subject Area半导体物理
Funding OrganizationNational Basic Research Program of China [2007CB924904, 2011CB932901]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20843
Collection半导体超晶格国家重点实验室
Corresponding AuthorZheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. hzzheng@red.semi.ac.cn
Recommended Citation
GB/T 7714
Shen C,Wang LG,Zheng HZ,et al. Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base[J]. JOURNAL OF APPLIED PHYSICS,2011,109(9):Article no.93507.
APA Shen C.,Wang LG.,Zheng HZ.,Zhu H.,Chen L.,...&Zheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. hzzheng@red.semi.ac.cn.(2011).Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base.JOURNAL OF APPLIED PHYSICS,109(9),Article no.93507.
MLA Shen C,et al."Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base".JOURNAL OF APPLIED PHYSICS 109.9(2011):Article no.93507.
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