SEMI OpenIR  > 半导体材料科学中心
Preparation and Optical Performance of Freestanding GaN Thick Films
Hu QA; Wei TB; Duan RF; Yang JK; Huo ZQ; Lu TC; Zeng YP; Hu, QA, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. huqiang@semi.ac.cn
2010
Source PublicationRARE METAL MATERIALS AND ENGINEERING
ISSN1002-185X
Volume39Issue:12Pages:2169-2172
metadata_83[hu qiang; wei tongbo; duan ruifei; yang jiankun; huo ziqiang; zeng yiping] chinese acad sci, inst semicond, beijing 100083, peoples r china; [hu qiang; lu tiecheng] sichuan univ, key lab radiat phys & technol, minist educ, chengdu 610064, peoples r china
KeywordGan Hvpe Freestanding Thick Films Stress Release Photoluminescence Vapor-phase Epitaxy Growth Pressure Hvpe
Subject Area半导体材料
Indexed BySCI
Language中文
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20825
Collection半导体材料科学中心
Corresponding AuthorHu, QA, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. huqiang@semi.ac.cn
Recommended Citation
GB/T 7714
Hu QA,Wei TB,Duan RF,et al. Preparation and Optical Performance of Freestanding GaN Thick Films[J]. RARE METAL MATERIALS AND ENGINEERING,2010,39(12):2169-2172.
APA Hu QA.,Wei TB.,Duan RF.,Yang JK.,Huo ZQ.,...&Hu, QA, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. huqiang@semi.ac.cn.(2010).Preparation and Optical Performance of Freestanding GaN Thick Films.RARE METAL MATERIALS AND ENGINEERING,39(12),2169-2172.
MLA Hu QA,et al."Preparation and Optical Performance of Freestanding GaN Thick Films".RARE METAL MATERIALS AND ENGINEERING 39.12(2010):2169-2172.
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