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Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN
Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Deng QW; Li JM; Wang ZG; Hou X; Hou, QF, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. qfhou@semi.ac.cn
2011
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume98Issue:10Pages:Article no.102104
metadata_83[hou, qifeng; wang, xiaoliang; xiao, hongling; wang, cuimei; yang, cuibai; yin, haibo; deng, qingwen; li, jinmin] chinese acad sci, ctr mat sci, inst semicond, beijing 100083, peoples r china; [wang, xiaoliang; xiao, hongling; wang, cuimei; yang, cuibai; wang, zhanguo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; [wang, xiaoliang; xiao, hongling; wang, cuimei; yang, cuibai; li, jinmin; hou, xun] iscas xjtu joint lab funct mat & devices informat, beijing 100083, peoples r china
KeywordQuantum-well-structure Algan/gan Heterostructure Yellow Luminescence Deep Levels Trap Performance Frequency Epilayers Origin Diodes
Subject Area半导体材料
Funding OrganizationKnowledge Innovation Engineering of Chinese Academy of Sciences [YYYJ-0701-02]; National Nature Sciences Foundation of China [60890193, 60906006]; State Key Development Program for Basic Research of China [2006CB604905, 2010CB327503]; Chinese Academy of Sciences [ISCAS2008T01, ISCAS2009L01, ISCAS2009L02]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20821
Collection半导体材料科学中心
Corresponding AuthorHou, QF, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. qfhou@semi.ac.cn
Recommended Citation
GB/T 7714
Hou QF,Wang XL,Xiao HL,et al. Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN[J]. APPLIED PHYSICS LETTERS,2011,98(10):Article no.102104.
APA Hou QF.,Wang XL.,Xiao HL.,Wang CM.,Yang CB.,...&Hou, QF, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. qfhou@semi.ac.cn.(2011).Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN.APPLIED PHYSICS LETTERS,98(10),Article no.102104.
MLA Hou QF,et al."Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN".APPLIED PHYSICS LETTERS 98.10(2011):Article no.102104.
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