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InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage
Zhang XB; Wang XL; Xiao HL; Yang CB; Hou QF; Yin HB; Chen H; Wang ZG; Zhang, XB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. soffeezxb@163.com
2011
Source PublicationCHINESE PHYSICS B
ISSN1674-1056
Volume20Issue:2Pages:Article no.28402
metadata_83[zhang xiao-bin; wang xiao-liang; xiao hong-ling; yang cui-bai; hou qi-feng; yin hai-bo; chen hong] chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china; [wang xiao-liang; xiao hong-ling; yang cui-bai; wang zhan-guo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordIngan Solar Cell Multiple Quantum Wells In1-xgaxn Alloys Band-gap Inn
Subject Area半导体材料
Funding OrganizationChinese Academy of Sciences [YYYJ-0701-02, ISCAS2008T01, ISCAS2009L01, ISCAS2009L02]; National Natural Science Foundation of China [60890193, 60906006]; State Key Development Program for Basic Research of China [2006CB604905, 2010CB327503]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20819
Collection半导体材料科学中心
Corresponding AuthorZhang, XB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. soffeezxb@163.com
Recommended Citation
GB/T 7714
Zhang XB,Wang XL,Xiao HL,et al. InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage[J]. CHINESE PHYSICS B,2011,20(2):Article no.28402.
APA Zhang XB.,Wang XL.,Xiao HL.,Yang CB.,Hou QF.,...&Zhang, XB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. soffeezxb@163.com.(2011).InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage.CHINESE PHYSICS B,20(2),Article no.28402.
MLA Zhang XB,et al."InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage".CHINESE PHYSICS B 20.2(2011):Article no.28402.
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