Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer

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	Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer
	Zhao J; Hu LZ; Zhao, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. jiezhao_sub@163.com
	2009
Source Publication	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN	1369-8001
Volume	12 Issue:6 Pages:233-237
metadata_83	[zhao, jie] chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china; [zhao, jie; hu, lizhong] dalian univ technol, sch phys & optoelect technol, dalian 116024, peoples r china
Keyword	Zno Pulsed Laser Deposition X-ray Diffraction Photoluminescence Reflection High-energy Electron Diffraction Pulsed-laser Deposition Thin-films Pld Technique Growth Sapphire Temperature
Subject Area	半导体材料
Funding Organization	National Natural Science Foundation of China [60777009]; Education Department of Liaoning Province [20060131]
Indexed By	SCI
Language	英语
Date Available	2011-07-05
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20817
Collection	半导体材料科学中心
Corresponding Author	Zhao, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. jiezhao_sub@163.com
Recommended Citation GB/T 7714	Zhao J,Hu LZ,Zhao, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. jiezhao_sub@163.com. Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2009,12(6):233-237.
APA	Zhao J,Hu LZ,&Zhao, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. jiezhao_sub@163.com.(2009).Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,12(6),233-237.
MLA	Zhao J,et al."Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 12.6(2009):233-237.

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