Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer | |
Zhao J![]() | |
2009 | |
Source Publication | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
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ISSN | 1369-8001 |
Volume | 12Issue:6Pages:233-237 |
metadata_83 | [zhao, jie] chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china; [zhao, jie; hu, lizhong] dalian univ technol, sch phys & optoelect technol, dalian 116024, peoples r china |
Keyword | Zno Pulsed Laser Deposition X-ray Diffraction Photoluminescence Reflection High-energy Electron Diffraction Pulsed-laser Deposition Thin-films Pld Technique Growth Sapphire Temperature |
Subject Area | 半导体材料 |
Funding Organization | National Natural Science Foundation of China [60777009]; Education Department of Liaoning Province [20060131] |
Indexed By | SCI |
Language | 英语 |
Date Available | 2011-07-05 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20817 |
Collection | 半导体材料科学中心 |
Corresponding Author | Zhao, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. jiezhao_sub@163.com |
Recommended Citation GB/T 7714 | Zhao J,Hu LZ,Zhao, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. jiezhao_sub@163.com. Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2009,12(6):233-237. |
APA | Zhao J,Hu LZ,&Zhao, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. jiezhao_sub@163.com.(2009).Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,12(6),233-237. |
MLA | Zhao J,et al."Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 12.6(2009):233-237. |
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