| Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition | |
Wei M; Wang XL; Xiao HL; Wang CM; Pan X ; Hou QF; Wang ZG; Wei, M, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. mengw@semi.ac.cn
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| 2011 | |
| Source Publication | CHINESE PHYSICS LETTERS
 |
| ISSN | 0256-307X |
| Volume | 28Issue:4Pages:Article no.48102 |
| metadata_83 | [wei meng; wang xiao-liang; xiao hong-ling; wang cui-mei; pan xu; hou qi-feng] chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china; [wang xiao-liang; xiao hong-ling; wang cui-mei; wang zhan-guo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china |
| Keyword | Electron-mobility Transistors Al-content Stress-control Phase Epitaxy Algan Buffer Layers Heterostructures Interlayers Silicon |
| Subject Area | 半导体材料 |
| Funding Organization | Chinese Academy of Sciences [YYYJ-0701-02, IS-CAS2008T01, ISCAS2009L01, ISCAS2009L02]; National Natural Science Foundation of China [60890193, 60906006]; National Basic Research Program of China [2006CB604905, 2010CB327503] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2011-07-05 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/20815 |
| Collection | 半导体材料科学中心 |
| Corresponding Author | Wei, M, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. mengw@semi.ac.cn |
| Recommended Citation GB/T 7714 | Wei M,Wang XL,Xiao HL,et al. Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition[J]. CHINESE PHYSICS LETTERS,2011,28(4):Article no.48102. |
| APA | Wei M.,Wang XL.,Xiao HL.,Wang CM.,Pan X.,...&Wei, M, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. mengw@semi.ac.cn.(2011).Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition.CHINESE PHYSICS LETTERS,28(4),Article no.48102. |
| MLA | Wei M,et al."Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition".CHINESE PHYSICS LETTERS 28.4(2011):Article no.48102. |
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| 201185.pdf（653KB） | 限制开放 | -- | Application Full Text | |||
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