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Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition
Wei M; Wang XL; Xiao HL; Wang CM; Pan X; Hou QF; Wang ZG; Wei, M, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. mengw@semi.ac.cn
2011
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume28Issue:4Pages:Article no.48102
metadata_83[wei meng; wang xiao-liang; xiao hong-ling; wang cui-mei; pan xu; hou qi-feng] chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china; [wang xiao-liang; xiao hong-ling; wang cui-mei; wang zhan-guo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordElectron-mobility Transistors Al-content Stress-control Phase Epitaxy Algan Buffer Layers Heterostructures Interlayers Silicon
Subject Area半导体材料
Funding OrganizationChinese Academy of Sciences [YYYJ-0701-02, IS-CAS2008T01, ISCAS2009L01, ISCAS2009L02]; National Natural Science Foundation of China [60890193, 60906006]; National Basic Research Program of China [2006CB604905, 2010CB327503]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20815
Collection半导体材料科学中心
Corresponding AuthorWei, M, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. mengw@semi.ac.cn
Recommended Citation
GB/T 7714
Wei M,Wang XL,Xiao HL,et al. Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition[J]. CHINESE PHYSICS LETTERS,2011,28(4):Article no.48102.
APA Wei M.,Wang XL.,Xiao HL.,Wang CM.,Pan X.,...&Wei, M, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. mengw@semi.ac.cn.(2011).Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition.CHINESE PHYSICS LETTERS,28(4),Article no.48102.
MLA Wei M,et al."Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition".CHINESE PHYSICS LETTERS 28.4(2011):Article no.48102.
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