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Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW; Li, H, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. wangz@whu.edu.cn
2011
Source PublicationSEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN0268-1242
Volume26Issue:7Pages:Article no.75016
metadata_83[li hui; zhou kai; pang jingbiao; shao yundong; wang zhu] wuhan univ, dept phys, wuhan 430072, peoples r china; [zhao youwen] chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china
KeywordUndoped Gallium Antimonide Self-diffusion Native Defects N-type Crystals Cathodoluminescence Photoluminescence Semiconductors Spectroscopy Luminescence
Subject Area半导体材料
Funding OrganizationNatural Science Foundation of China [10775107]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20813
Collection半导体材料科学中心
Corresponding AuthorLi, H, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. wangz@whu.edu.cn
Recommended Citation
GB/T 7714
Li H,Zhou K,Pang JB,et al. Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2011,26(7):Article no.75016.
APA Li H.,Zhou K.,Pang JB.,Shao YD.,Wang Z.,...&Li, H, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. wangz@whu.edu.cn.(2011).Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,26(7),Article no.75016.
MLA Li H,et al."Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 26.7(2011):Article no.75016.
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