| Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation | |
| Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW; Li, H, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. wangz@whu.edu.cn | |
| 2011 | |
| Source Publication | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| ISSN | 0268-1242 |
| Volume | 26Issue:7Pages:Article no.75016 |
| metadata_83 | [li hui; zhou kai; pang jingbiao; shao yundong; wang zhu] wuhan univ, dept phys, wuhan 430072, peoples r china; [zhao youwen] chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china |
| Keyword | Undoped Gallium Antimonide Self-diffusion Native Defects N-type Crystals Cathodoluminescence Photoluminescence Semiconductors Spectroscopy Luminescence |
| Subject Area | 半导体材料 |
| Funding Organization | Natural Science Foundation of China [10775107] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2011-07-05 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/20813 |
| Collection | 半导体材料科学中心 |
| Corresponding Author | Li, H, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. wangz@whu.edu.cn |
| Recommended Citation GB/T 7714 | Li H,Zhou K,Pang JB,et al. Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2011,26(7):Article no.75016. |
| APA | Li H.,Zhou K.,Pang JB.,Shao YD.,Wang Z.,...&Li, H, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. wangz@whu.edu.cn.(2011).Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,26(7),Article no.75016. |
| MLA | Li H,et al."Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 26.7(2011):Article no.75016. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 201160.pdf（616KB） | 限制开放 | -- | Application Full Text | |||
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