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Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
Pan X; Wei M; Yang CB; Xiao HL; Wang CM; Wang XL; Pan, X, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100864, Peoples R China. xpan@semi.ac.cn
2011
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume318Issue:1Pages:464-467
metadata_83[pan, xu; wei, meng; yang, cuibai; xiao, hongling; wang, cuimei; wang, xiaoliang] chinese acad sci, inst semicond, ctr mat sci, beijing 100864, peoples r china; [yang, cuibai; xiao, hongling; wang, cuimei; wang, xiaoliang] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100864, peoples r china
KeywordSandwich Structure Stress Aluminum Nitride Gallium Nitride Silicon Phonon Deformation Potentials Wurtzite Aln Silicon Stress Transistors Epitaxy Layers
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20811
Collection半导体材料科学中心
Corresponding AuthorPan, X, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100864, Peoples R China. xpan@semi.ac.cn
Recommended Citation
GB/T 7714
Pan X,Wei M,Yang CB,et al. Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer[J]. JOURNAL OF CRYSTAL GROWTH,2011,318(1):464-467.
APA Pan X.,Wei M.,Yang CB.,Xiao HL.,Wang CM.,...&Pan, X, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100864, Peoples R China. xpan@semi.ac.cn.(2011).Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer.JOURNAL OF CRYSTAL GROWTH,318(1),464-467.
MLA Pan X,et al."Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer".JOURNAL OF CRYSTAL GROWTH 318.1(2011):464-467.
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