SEMI OpenIR  > 中科院半导体材料科学重点实验室
Electron mobility in modulation-doped AlSb/InAs quantum wells
Li YB; Zhang Y; Zeng YP; Zhang, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. terahertzantenna@163.com; ypzeng@semi.ac.cn
2011
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume109Issue:7Pages:Article no.73703
metadata_83[li, yanbo; zhang, yang; zeng, yiping] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; [li, yanbo; zhang, yang; zeng, yiping] chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china
KeywordAcoustic-phonon-scattering Low-power Applications Transport-properties Interface Roughness Inas/alsb Hemts Heterostructures Inas Transistors Gas Layers
Subject Area半导体材料
Funding OrganizationChinese Academy of Sciences [ISCAS2009T04]; Beijing Municipal Natural Science Foundation [2112040]; Beijing Nova Program [2010B056]
Indexed BySCI
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20809
Collection中科院半导体材料科学重点实验室
Corresponding AuthorZhang, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. terahertzantenna@163.com; ypzeng@semi.ac.cn
Recommended Citation
GB/T 7714
Li YB,Zhang Y,Zeng YP,et al. Electron mobility in modulation-doped AlSb/InAs quantum wells[J]. JOURNAL OF APPLIED PHYSICS,2011,109(7):Article no.73703.
APA Li YB,Zhang Y,Zeng YP,Zhang, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. terahertzantenna@163.com,&ypzeng@semi.ac.cn.(2011).Electron mobility in modulation-doped AlSb/InAs quantum wells.JOURNAL OF APPLIED PHYSICS,109(7),Article no.73703.
MLA Li YB,et al."Electron mobility in modulation-doped AlSb/InAs quantum wells".JOURNAL OF APPLIED PHYSICS 109.7(2011):Article no.73703.
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