SEMI OpenIR  > 半导体材料科学中心
Si衬底上GaN基材料MOCVD生长及HEMT性能分析
魏萌
Subtype博士
Thesis Advisor王晓亮
2011
Degree Grantor中国科学院研究生院
Place of Conferral北京
Degree Discipline材料物理与化学
Subject Area半导体材料
Date Available2011-06-10
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20789
Collection半导体材料科学中心
Recommended Citation
GB/T 7714
魏萌. Si衬底上GaN基材料MOCVD生长及HEMT性能分析[D]. 北京. 中国科学院研究生院,2011.
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