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Spin splitting modulated by uniaxial stress in InAs nanowires
Liu GH (Liu Genhua); Chen YH (Chen Yonghai); Jia CH (Jia Caihong); Hao GD (Hao Guo-Dong); Wang ZG (Wang Zhanguo); Liu, GH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@red.semi.ac.cn
2011
Source PublicationJOURNAL OF PHYSICS-CONDENSED MATTER
Volume23Issue:1Pages:Art. No. 015801
AbstractWe theoretically study the electronic structure, spin splitting, effective mass, and spin orientation of InAs nanowires with cylindrical symmetry in the presence of an external electric field and uniaxial stress. Using an eight-band k center dot p theoretical model, we deduce a formula for the spin splitting in the system, indicating that the spin splitting under uniaxial stress is a nonlinear function of the momentum and the electric field. The spin splitting can be described by a linear Rashba model when the wavevector and the electric field are sufficiently small. Our numeric results show that the uniaxial stress can modulate the spin splitting. With the increase of wavevector, the uniaxial tensile stress first restrains and then amplifies the spin splitting of the lowest electron state compared to the no strain case. The reverse is true under a compression. Moreover, strong spin splitting can be induced by compression when the top of the valence band is close to the bottom of the conductance band, and the spin orientations of the electron stay almost unchanged before the overlap of the two bands.
metadata_24国内
KeywordNarrow-gap Semiconductor Inversion-asymmetry Quantum Dots Band States
Subject Area半导体材料
Funding OrganizationThe work was supported by the 973 program (2006CB604908, 2006CB921607), and the National Natural Science Foundation of China (60625402, 60990313).
Indexed BySCI
Language英语
Date Available2010-12-28
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20686
Collection中科院半导体材料科学重点实验室
Corresponding AuthorLiu, GH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@red.semi.ac.cn
Recommended Citation
GB/T 7714
Liu GH ,Chen YH ,Jia CH ,et al. Spin splitting modulated by uniaxial stress in InAs nanowires[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2011,23(1):Art. No. 015801.
APA Liu GH ,Chen YH ,Jia CH ,Hao GD ,Wang ZG ,&Liu, GH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@red.semi.ac.cn.(2011).Spin splitting modulated by uniaxial stress in InAs nanowires.JOURNAL OF PHYSICS-CONDENSED MATTER,23(1),Art. No. 015801.
MLA Liu GH ,et al."Spin splitting modulated by uniaxial stress in InAs nanowires".JOURNAL OF PHYSICS-CONDENSED MATTER 23.1(2011):Art. No. 015801.
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