SEMI OpenIR  > 中科院半导体材料科学重点实验室
Structure and properties of InAs/AlAs quantum dots for broadband emission
Meng XQ (Meng X. Q.); Jin P (Jin P.); Liang ZM (Liang Z. M.); Liu FQ (Liu F. Q.); Wang ZG (Wang Z. G.); Zhang ZY (Zhang Z. Y.); Meng, XQ, Wuhan Univ, Key Lab Artificial Micro & Nano Struct, Minist Educ, Wuhan 430072, Peoples R China. mengxq@whu.edu.cn
2010
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume108Issue:10Pages:Art. No. 103515
AbstractThe InAs quantum dots (QDs) on an AlAs layer are grown on GaAs substrates by molecular beam epitaxy technique. The properties of materials and optics of such QD structures have been investigated by cross sectional transmission electron microscopy and photoluminescence (PL) techniques. It is discovered that the inhomogeneous strain filed mainly exists below InAs QDs layers in the case of no wetting layer. The full width at half maximums (FWHMs) and intensities of PL emission peaks of InAs QDs are found to be closely related to the thickness of the thin AlAs layers. The InAs QDs on an eight monolayer AlAs layer, with wide FWHMs and large integral intensity of PL emission peaks, are favorable for producing broadband QD superluminescent diodes, external-cavity QD laser with large tuning range.
metadata_24国际
KeywordChemical-vapor-deposition
Subject Area半导体材料
Funding OrganizationThis work was supported by the National Natural Science Foundation of China under Grant Nos. 10775106 and 60676036.
Indexed BySCI
Language英语
Date Available2010-12-28
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20685
Collection中科院半导体材料科学重点实验室
Corresponding AuthorMeng, XQ, Wuhan Univ, Key Lab Artificial Micro & Nano Struct, Minist Educ, Wuhan 430072, Peoples R China. mengxq@whu.edu.cn
Recommended Citation
GB/T 7714
Meng XQ ,Jin P ,Liang ZM ,et al. Structure and properties of InAs/AlAs quantum dots for broadband emission[J]. JOURNAL OF APPLIED PHYSICS,2010,108(10):Art. No. 103515.
APA Meng XQ .,Jin P .,Liang ZM .,Liu FQ .,Wang ZG .,...&Meng, XQ, Wuhan Univ, Key Lab Artificial Micro & Nano Struct, Minist Educ, Wuhan 430072, Peoples R China. mengxq@whu.edu.cn.(2010).Structure and properties of InAs/AlAs quantum dots for broadband emission.JOURNAL OF APPLIED PHYSICS,108(10),Art. No. 103515.
MLA Meng XQ ,et al."Structure and properties of InAs/AlAs quantum dots for broadband emission".JOURNAL OF APPLIED PHYSICS 108.10(2010):Art. No. 103515.
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