SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films
Ying J (Ying J.); Zhang XW (Zhang X. W.); Fan YM (Fan Y. M.); Tan HR (Tan H. R.); Yin ZG (Yin Z. G.); Zhang, XW, CAS, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. xwzhang@semi.ac.cn
2010
Source PublicationDIAMOND AND RELATED MATERIALS
Volume19Issue:11Pages:1371-1376
AbstractWe have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measurements. The results suggest that the content of the cubic phase remains stable on the whole with the incorporation of Si up to a concentration of 3.3 at.%, and the higher Si concentrations lead to a gradual change from c-BN to hexagonal boron nitride. It is found that the introduced Si atoms only replace B atoms and combine with N atoms to form Si-N bonds, and no evidence of the existence of Si-B bonds is observed. The resistance of the Si-doped c-BN films gradually decreases with increasing Si concentration, and the resistivity of the c-BN film with 3.3 at.% Si is lowered by two orders of magnitude as compared to undoped samples.
metadata_24其它
KeywordCubic Boron Nitride Doping Ion Beam Assisted depositIon X-ray Photoelectron Spectroscopy Ray Photoelectron-spectroscopy Vapor-deposition Si Nucleation Growth
Subject Area半导体材料
Funding OrganizationThis work was financially supported by the National Basic Research Program of China (973 Program) under grant no. 2010CB933803 and the National Natural Science Foundation of China (50601025).
Indexed BySCI
Language英语
Date Available2010-12-28
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20684
Collection中科院半导体材料科学重点实验室
Corresponding AuthorZhang, XW, CAS, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. xwzhang@semi.ac.cn
Recommended Citation
GB/T 7714
Ying J ,Zhang XW ,Fan YM ,et al. Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films[J]. DIAMOND AND RELATED MATERIALS,2010,19(11):1371-1376.
APA Ying J ,Zhang XW ,Fan YM ,Tan HR ,Yin ZG ,&Zhang, XW, CAS, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. xwzhang@semi.ac.cn.(2010).Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films.DIAMOND AND RELATED MATERIALS,19(11),1371-1376.
MLA Ying J ,et al."Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films".DIAMOND AND RELATED MATERIALS 19.11(2010):1371-1376.
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