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Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films
Hao GD (Hao Guo-Dong); Chen YH (Chen Yong-Hai); Fan YM (Fan Ya-Ming); Huang XH (Huang Xiao-Hui); Wang HB (Wang Huai-Bing); Hao, GD, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanodevices & Mat Div, Suzhou 215125, Peoples R China.
2010
Source PublicationCHINESE PHYSICS B
Volume19Issue:11Pages:Art. No. 117104
AbstractWe present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11 (2) over bar2)-plane The calculations are performed by the kappa p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction The results show that the transition energies decrease with the biaxial strains changing from -0 5% to 0 5% For films of (11 (2) over bar2)-plane, the strains are expected to be anisotropic in the growth plane Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property The strain can also result in optical polarisation switching phenomena Finally, we discuss the applications of these properties to the (11 (2) over bar2) plane GaN based light emitting diode and lase diode
metadata_24国内
KeywordLight-emitting-diodes Wurtzite Semiconductors Quantum-wells Matrix-elements Semipolar Sapphire
Subject Area半导体材料
Funding OrganizationProject supported by the National Basic Research Program of China (Grant Nos 2006CB604908 and 2006CB921607), and the National Natural Science Foundation of China (Grant Nos 60625402, 60990313 and 60990311)
Indexed BySCI
Language英语
Date Available2010-12-28
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20683
Collection中科院半导体材料科学重点实验室
Corresponding AuthorHao, GD, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanodevices & Mat Div, Suzhou 215125, Peoples R China.
Recommended Citation
GB/T 7714
Hao GD ,Chen YH ,Fan YM ,et al. Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films[J]. CHINESE PHYSICS B,2010,19(11):Art. No. 117104.
APA Hao GD ,Chen YH ,Fan YM ,Huang XH ,Wang HB ,&Hao, GD, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanodevices & Mat Div, Suzhou 215125, Peoples R China..(2010).Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films.CHINESE PHYSICS B,19(11),Art. No. 117104.
MLA Hao GD ,et al."Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films".CHINESE PHYSICS B 19.11(2010):Art. No. 117104.
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