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The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses
Hu XL (Hu Xiao-Long); Zhang JY (Zhang Jiang-Yong); Shang JZ (Shang Jing-Zhi); Liu WJ (Liu Wen-Jie); Zhang BP (Zhang Bao-Ping); Zhang, BP, Xiamen Univ, Dept Phys, Lab Micronano Optoelect, Xiamen 361005, Peoples R China.
2010
Source PublicationCHINESE PHYSICS B
Volume19Issue:11Pages:Art. No. 117801
AbstractThis paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (LO) phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases These results reveal that there is a large built-in electric field in the well layer and the exciton-LO phonon coupling is strongly affected by the thickness of the cap layer
metadata_24国际
KeywordExciton-longitudinal-optical-phonon Ingan/gan Single Quantum Well Gan Cap Layer Huang-rhys Factor
Subject Area光电子学
Funding OrganizationProject supported by the National Natural Science Foundation of China (Grant Nos 60876007 and 10974165) and the Research Program of Xiamen Municipal Science and Technology Bureau, China (GrantNo 2006AA03Z110)
Indexed BySCI
Language英语
Date Available2010-12-28
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20682
Collection集成光电子学国家重点实验室
Corresponding AuthorZhang, BP, Xiamen Univ, Dept Phys, Lab Micronano Optoelect, Xiamen 361005, Peoples R China.
Recommended Citation
GB/T 7714
Hu XL ,Zhang JY ,Shang JZ ,et al. The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses[J]. CHINESE PHYSICS B,2010,19(11):Art. No. 117801.
APA Hu XL ,Zhang JY ,Shang JZ ,Liu WJ ,Zhang BP ,&Zhang, BP, Xiamen Univ, Dept Phys, Lab Micronano Optoelect, Xiamen 361005, Peoples R China..(2010).The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses.CHINESE PHYSICS B,19(11),Art. No. 117801.
MLA Hu XL ,et al."The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses".CHINESE PHYSICS B 19.11(2010):Art. No. 117801.
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