| The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses | |
| Hu XL (Hu Xiao-Long); Zhang JY (Zhang Jiang-Yong); Shang JZ (Shang Jing-Zhi); Liu WJ (Liu Wen-Jie); Zhang BP (Zhang Bao-Ping); Zhang, BP, Xiamen Univ, Dept Phys, Lab Micronano Optoelect, Xiamen 361005, Peoples R China. | |
| 2010 | |
| Source Publication | CHINESE PHYSICS B
 |
| Volume | 19Issue:11Pages:Art. No. 117801 |
| Abstract | This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (LO) phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases These results reveal that there is a large built-in electric field in the well layer and the exciton-LO phonon coupling is strongly affected by the thickness of the cap layer |
| metadata_24 | 国际 |
| Keyword | Exciton-longitudinal-optical-phonon Ingan/gan Single Quantum Well Gan Cap Layer Huang-rhys Factor |
| Subject Area | 光电子学 |
| Funding Organization | Project supported by the National Natural Science Foundation of China (Grant Nos 60876007 and 10974165) and the Research Program of Xiamen Municipal Science and Technology Bureau, China (GrantNo 2006AA03Z110) |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2010-12-28 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/20682 |
| Collection | 集成光电子学国家重点实验室 |
| Corresponding Author | Zhang, BP, Xiamen Univ, Dept Phys, Lab Micronano Optoelect, Xiamen 361005, Peoples R China. |
| Recommended Citation GB/T 7714 | Hu XL ,Zhang JY ,Shang JZ ,et al. The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses[J]. CHINESE PHYSICS B,2010,19(11):Art. No. 117801. |
| APA | Hu XL ,Zhang JY ,Shang JZ ,Liu WJ ,Zhang BP ,&Zhang, BP, Xiamen Univ, Dept Phys, Lab Micronano Optoelect, Xiamen 361005, Peoples R China..(2010).The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses.CHINESE PHYSICS B,19(11),Art. No. 117801. |
| MLA | Hu XL ,et al."The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses".CHINESE PHYSICS B 19.11(2010):Art. No. 117801. |
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| The exciton-longitud（217KB） | 限制开放 | License | Application Full Text | |||
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