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Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers
Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan); Hao, RT, Yunnan Normal Univ, Inst Solar Energy, Key Lab Renewable Energy Adv Mat & Mfg Technol, Educ Minist, Kunming 650092, Yunnan Province, Peoples R China. ruitinghao@semi.ac.cn
2010
Source PublicationTHIN SOLID FILMS
Volume519Issue:1Pages:228-230
AbstractGaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) substrates. The crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (PL), respectively. It was found that the AlSb/GaSb compound buffer layers can restrict the dislocations into GaSb epilayers. The intensity of PL spectra of GaSb layer becomes large with the increasing the periods of AlSb/GaSb superlattices, indicating that the optical quality of GaSb films is improved.
metadata_24其它
KeywordGallium Arsenide Gallium Antimonide Gallium Antimonide/aluminum Antimonide Superlattices Molecular Beam Epitaxy Vapor-phase Epitaxy Surface-morphology Growth Superlattices Temperature Relaxation Detectors Gaas(001) Mocvd Films
Subject Area半导体材料
Funding OrganizationThis work is supported by the National Natural Science Foundation of China (Grant Nos.: 60607016, 60625405), the National Basic Research Program of China (Grant No.: 2007CB936304) and the Natural Science Foundation of Yunnan Province (Grant Nos.: 2009CD045 2007E197M).
Indexed BySCI
Language英语
Date Available2010-12-28
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20681
Collection半导体超晶格国家重点实验室
Corresponding AuthorHao, RT, Yunnan Normal Univ, Inst Solar Energy, Key Lab Renewable Energy Adv Mat & Mfg Technol, Educ Minist, Kunming 650092, Yunnan Province, Peoples R China. ruitinghao@semi.ac.cn
Recommended Citation
GB/T 7714
Hao RT ,Deng SK ,Shen LX ,et al. Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers[J]. THIN SOLID FILMS,2010,519(1):228-230.
APA Hao RT .,Deng SK .,Shen LX .,Yang PZ .,Tu JL .,...&Hao, RT, Yunnan Normal Univ, Inst Solar Energy, Key Lab Renewable Energy Adv Mat & Mfg Technol, Educ Minist, Kunming 650092, Yunnan Province, Peoples R China. ruitinghao@semi.ac.cn.(2010).Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers.THIN SOLID FILMS,519(1),228-230.
MLA Hao RT ,et al."Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers".THIN SOLID FILMS 519.1(2010):228-230.
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